Schottky-contact intrinsic current blocking layer for high efficiency AlGaInP-based red mini-LEDs.

AlGaInP-based red light emitting diodes (LEDs) are considered as promising light sources in future full-color displays. At present, vertical chip configuration is still the mainstream device structure of AlGaInP-based red LEDs. However, current crowding around p-electrode severely hinders an efficient improvement. Here, we propose a Schottky-contact current blocking layer (SCBL) to enhance current spreading and to improve light extraction efficiency of AlGaInP-based red vertical miniaturized LEDs (mini-LEDs). By utilizing the Schottky contact between ITO and p-GaP, the SCBL can hinder current crowding around the p-electrode. The current is forced to inject into an active region through a p-GaP+ ohmic contact layer, avoiding light absorption by p-electrode. Through the transfer length method, the Schottky contact characteristics between the ITO and p-GaP as well as the ohmic contact characteristics between ITO and p-GaP+ are demonstrated. Benefiting from superior current spreading and improved light extraction, a mini-LED with SCBL realizes an enhancement of 31.8% in external quantum efficiency (EQE) at 20 mA in comparison with a mini-LED without SCBL.

Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes.

Here, we propose a sandwich-like Si-doping scheme (undoped/Si-doped/undoped) in Al0.6Ga0.4N quantum barriers (QBs) to simultaneously promote the optoelectronic performances and reliability of deep ultraviolet light-emitting diodes (DUV-LEDs). Through experimental and numerical analyses, in the case of DUV-LEDs with conventional uniform Si-doping QB structure, severe operation-induced reliability degradation, including the increase of reverse leakage current (IR) and reduction of light output power (LOP), will offset the enhancement of optoelectronic performances as the Si-doping levels increase to an extent, which hinders further development of DUV-LEDs. According to a transmission electron microscope characterization and a numerical simulation, an improved interfacial quality in multiple quantum wells (MQWs) and more uniform carrier distribution within MQWs are demonstrated for our proposed Si-doping structure in comparison to the uniform Si-doping structure. Consequently, the proposed DUV-LED shows superior wall-plug efficiency (4%), IR at -6 V reduced by almost one order of magnitude, and slower LOP degradation after 168-h 100 mA-current-stress operation. This feasible doping scheme provides a promising strategy for the high-efficiency and cost-competitive DUV-LEDs.

Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes: erratum.

We present an erratum to our Letter [Opt. Lett.49, 2049 (2024)10.1364/OL.522212]. There is a careless omission of some references because our Letter is longer than the maximum allowed four pages. The missing references and their specific quote location are listed in the following. These corrections do not affect the data plotted in figures, discussion, or conclusion of the original Letter.

Improvement of light extraction efficiency in AlGaInP-based vertical miniaturized-light-emitting diodes via surface texturing.

AlGaInP-based light-emitting diodes (LEDs) suffer from a low external quantum efficiency (EQE), which is mainly restrained by the poor light extraction efficiency. Here, we demonstrate AlGaInP-based vertical miniaturized-LEDs (mini-LEDs) with a porous n-AlGaInP surface using a wet etching process to boost light extraction. We investigated the effects of etching time on the surface morphology of the porous n-AlGaInP surface. We found that as the etching time is prolonged, the density of pores increases initially and decreases subsequently. In comparison with the vertical mini-LED with a smooth n-AlGaInP surface, the vertical mini-LEDs with the porous n-AlGaInP surface reveal improvement in light output power and EQE, meanwhile, without the deterioration of electrical performance. The highest improvement of 38.9% in EQE measured at 20 mA is observed from the vertical mini-LED with the maximum density of the pores. Utilizing a three-dimensional finite-difference time-domain method, we reveal the underlying mechanisms of improved performance, which are associated with suppressed total internal reflection and efficient light scattering effect of the pores.

Understanding the pathogenesis of brain arteriovenous malformation: genetic variations, epigenetics, signaling pathways, and immune inflammation.

Brain arteriovenous malformation (BAVM) is a rare but serious cerebrovascular disease whose pathogenesis has not been fully elucidated. Studies have found that epigenetic regulation, genetic variation and their signaling pathways, immune inflammation, may be the cause of BAVM the main reason. This review comprehensively analyzes the key pathways and inflammatory factors related to BAVMs, and explores their interplay with epigenetic regulation and genetics. Studies have found that epigenetic regulation such as DNA methylation, non-coding RNAs and m6A RNA modification can regulate endothelial cell proliferation, apoptosis, migration and damage repair of vascular malformations through different target gene pathways. Gene defects such as KRAS, ACVRL1 and EPHB4 lead to a disordered vascular environment, which may promote abnormal proliferation of blood vessels through ERK, NOTCH, mTOR, Wnt and other pathways. PDGF-B and PDGFR-ß were responsible for the recruitment of vascular adventitial cells and smooth muscle cells in the extracellular matrix environment of blood vessels, and played an important role in the pathological process of BAVM. Recent single-cell sequencing data revealed the diversity of various cell types within BAVM, as well as the heterogeneous expression of vascular-associated antigens, while neutrophils, macrophages and cytokines such as IL-6, IL-1, TNF-α, and IL-17A in BAVM tissue were significantly increased. Currently, there are no specific drugs targeting BAVMs, and biomarkers for BAVM formation, bleeding, and recurrence are lacking clinically. Therefore, further studies on molecular biological mechanisms will help to gain insight into the pathogenesis of BAVM and develop potential therapeutic strategies.

Electroluminescence and temperature-dependent time-resolved photoluminescence of monolithically integrated triple-wavelength InGaN-based LED.

Here, we propose a monolithically integrated triple-wavelength InGaN-based LED structure and conduct comprehensive research on its emission dynamics under electrical and optical excitation. Through experimental and numerical analyses, a carrier transport and a recombination process can be manipulated in bandgap-engineered multiple quantum wells (MQWs), thus realizing the manipulation of emission properties. A rational triple-wavelength LED structure is heteroepitaxially grown, which shows excellent color stability versus injected currents. Furthermore, utilizing the temperature-dependent time-resolved photoluminescence (TRPL), triple-wavelength peaks display different TRPL decay behaviors. Especially, an anomalous three-stage decay phenomenon is found for a low-energy peak measured at 10 K, accompanied by a decay profile transition with the increasing temperature. The underlying mechanisms are revealed and correlated with carrier localization, interaction between different QWs, and competition between radiative and nonradiative recombination.

Improved efficiency of AlGaN-based flip-chip deep-ultraviolet LEDs using a Ni/Rh/Ni/Au p-type electrode.

Here, we propose a thermally stable and high-reflectivity Ni/Rh/Ni/Au p-type electrode for AlGaN-based deep-ultraviolet (DUV) flip-chip light-emitting diodes (FCLEDs). We discover that the reflectance of Ni/Au electrode deteriorated significantly after rapid thermal annealing. Experiments show that Ni and Au agglomerate at high temperatures, and more incident photons traverse the gaps between the agglomerates, leading to a decrease in reflectance of Ni/Au after annealing. In contrast, the proposed Ni/Rh/Ni/Au p-type electrode shows remarkable thermal stability as a result of the suppression of Ni agglomeration by the Rh layer at high temperatures. Besides, due to the higher reflectivity of the Ni/Rh/Ni/Au electrode and its lower specific contact resistivity formed with p-GaN, the external quantum efficiency and wall-plug efficiency of a DUV FCLED with Ni/Rh/Ni/Au electrode are increased by 13.94% and 17.30% in comparison with the one with Ni/Au electrode at an injection current of 100 mA. The Ni/Rh/Ni/Au electrode effectively solves the long-standing dilemma of efficiency degradation of DUV FCLEDs with a Ni/Au electrode after high-temperature annealing.

Enhanced performance of 275-nm AlGaN-based deep-ultraviolet LEDs via internal-roughed sapphire and SiO2-antireflection film.

The internal-roughed sapphire in a 275-nm AlGaN-based deep-ultraviolet (DUV) LED is fabricated using a laser stealth dicing technique to improve the high-angle extraction. Furthermore, the low-angle extraction is enhanced by depositing a SiO2-antireflection film on the internal-roughed sapphire surface. Compared with conventional DUV LEDs with a light output power (LOP) of 33.05 mW at 350 mA, the LOP of DUV LEDs with internal-roughed sapphire and SiO2-antireflection film increases by 20.85% to 39.94 mW. In addition, combined with finite-difference time-domain simulations, the effect of internal-roughed sapphire on the transmission and light extraction efficiency (LEE) of the DUV LEDs is revealed. The combination of the internal-roughed sapphire substrate and SiO2-antireflection film improves the LEEs of transverse electric (TE) and transverse magnetic (TM) polarized light by 1.6% and 108%, respectively. These results offer the potential for large-scale, low-cost industrial production of high-efficiency DUV LEDs.

Nanoimprinted patterned sapphire with silica array for efficient InGaN-based green mini-LEDs.

Here, we propose nanoimprinted patterned sapphire with a silica array (PSSA) with the aim to promote the efficiency of InGaN-based green (∼520 nm) mini-LEDs. According to x-ray diffraction measurements, the threading dislocation density of GaN epitaxial layers grown on nanoimprinted PSSA demonstrates a pronounced reduction compared with the epilayers on the conventional patterned sapphire substrate (PSS). Consequently, a mini-LED on PSSA exhibits a significantly boosted light output power (LOP) in comparison to a mini-LED on PSS. At 10 mA, the LOP of the mini-LED on PSS is 6.0 mW, and this is further improved to 6.8 mW for the mini-LED on PSSA. Moreover, the peak external quantum efficiencies of the mini-LEDs on PSS and PSSA are 41% and 47%, respectively. A three-dimensional (3D) finite-difference time-domain simulation demonstrates that the PSSA contributes enhanced light extraction for photons emitted from the active region. It is also highly feasible to use this nanoimprinted PSSA technology in red and blue mini-LEDs for the realization of full-color displays.

InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes.

High-efficiency GaN-based green LEDs are of paramount importance to the development of the monolithic integration of multicolor emitters and full-color high-resolution displays. Here, the InGaN quantum well with gradually varying indium (In) content was proposed for improving the performance of GaN-based green LEDs. The InGaN quantum well with gradually varying In content not only alleviates the quantum-confined Stark effect (QCSE), but also yields a low Auger recombination rate. Consequently, the gradual In content green LEDs exhibited increased light output power (LOP) and reduced efficiency droop as compared to constant In content green LEDs. At 60 A/cm2, the LOPs of the constant In content green LEDs and the gradual In content green LEDs were 33.9 mW and 55.2 mW, respectively. At 150 A/cm2, the efficiency droops for the constant In content green LEDs and the gradual In content green LEDs were 61% and 37.6%, respectively. This work demonstrates the potential for the gradual In content InGaN to replace constant In content InGaN as quantum wells in LED devices in a technologically and commercially effective manner.

Hyperoside: A review on its sources, biological activities, and molecular mechanisms.

Hyperoside is a natural flavonol glycoside in various plants, such as Crataegus pinnatifida Bge, Forsythia suspensa, and Cuscuta chinensis Lam. Medical research has found that hyperoside possesses a broad spectrum of biological activities, including anticancer, anti-inflammatory, antibacterial, antiviral, antidepressant, and organ protective effects. These pharmacological properties lay the foundation for its use in treating multiple diseases, such as sepsis, arthritis, colitis, diabetic nephropathy, myocardial ischemia-reperfusion, pulmonary fibrosis, and cancers. Hyperoside is obtained from the plants and chemical synthesis. This study aims to provide a comprehensive overview of hyperoside on its sources and biological activities to provide insights into its therapeutic potential, and to provide a basis for high-quality studies to determine the clinical efficacy of this compound.

Cavernous sinus dural arteriovenous fistula complicated by hippocampus venous congestion: A case report.

BACKGROUND: Hippocampal venous congestion is a rare complication associated with cavernous sinus dural arteriovenous fistulas (CS-DAVFs). CASE DESCRIPTION: A 74-year-old woman was admitted to the hospital with a swollen left eye. Isolated lesions were found in the left hippocampus and the middle cerebellar peduncle. Cerebral angiography revealed retrograde venous drainage of the bilateral inferior petrosal sinuses from the left CS-DAVF. The patient underwent transcatheter arterial embolization, resulting in complete resolution of the hippocampal lesions and neurological symptoms. CONCLUSION: Hippocampal injury is a rare complication of CS-DAVF. Attentive diagnosis and treatment can effectively prevent adverse consequences.

Comparative analysis of powdery mildew resistant and susceptible cultivated cucumber (Cucumis sativus L.) varieties to reveal the metabolic responses to Sphaerotheca fuliginea infection.

BACKGROUND: Cucumber (Cucumis sativus L.) is a widely planted vegetable crop that suffers from various pathogen infections. Powdery mildew (PM) is typical disease caused by Sphaerotheca fuliginea infection and destroys the production of cucumber. However, the metabolic responses to S. fuliginea infection are largely unknown. RESULTS: In our study, a PM resistant variety 'BK2' and a susceptible variety 'H136' were used to screen differentially accumulated metabolites (DAMs) and differentially expressed genes (DEGs) under S. fuliginea infection. Most of DEGs and DAMs were enriched in several primary and secondary metabolic pathways, including flavonoid, hormone, fatty acid and diterpenoid metabolisms. Our data showed that many flavonoid-related metabolites were significantly accumulated in BK2 rather than H136, suggesting an essential role of flavonoids in formation of resistant quality. Changes in expression of CYP73A, CYP81E1, CHS, F3H, HCT and F3'M genes provided a probable explanation for the differential accumulation of flavonoid-related metabolites. Interestingly, more hormone-related DEGs were detected in BK2 compared to H136, suggesting a violent response of hormone signaling pathways in the PM-resistant variety. The number of fatty acid metabolism-related DAMs in H136 was larger than that in BK2, indicating an active fatty acid metabolism in the PM-susceptible variety. CONCLUSIONS: Many differentially expressed transcription factor genes were identified under S. fuliginea infection, providing some potential regulators for the improvement of PM resistance. PM resistance of cucumber was controlled by a complex network consisting of various hormonal and metabolic pathways.

Toward efficient long-wavelength III-nitride emitters using a hybrid nucleation layer.

The realization of efficient III-nitride emitters in the green-to-amber region is fundamental to the monolithic integration of multicolor emitters and the development of III-nitride-based full-color high-resolution displays. A hybrid nucleation layer, which includes sputtered AlN and mid-temperature GaN components, was proposed for the development of efficient III-nitride emitters in the green-to-amber region. The mid-temperature GaN component in the hybrid nucleation layer induced the formation of a stacking fault band structure, which effectively relaxed the misfit stress at the GaN/sapphire interface. A reduced dislocation density and in-plane compressive stress in InGaN/GaN multiple quantum wells were obtained on the hybrid nucleation layer in comparison with the conventional sputtered AlN nucleation layer. Consequently, a significantly enhanced internal quantum efficiency and improved light output power were achieved for the LEDs grown on the hybrid nucleation layer. This gain is attributed to the increased localization depth and spatial overlapping of the electron and hole wave functions. In the present study, the hybrid nucleation layer provides a promising approach for the pursuit of efficient III-nitride emitters in the green-to-amber region.

Stacked GaN/AlN last quantum barrier for high-efficiency InGaN-based green light-emitting diodes.

Realization of efficient InGaN-based green light-emitting diodes (LEDs) is highly desirable in solid-state lighting industry. Here, we propose a stacked last quantum barrier (SLQB) GaN/AlN layer for green (∼550nm) LEDs grown on patterned sapphire substrate to improve the device performance. A green LED with a SLQB achieves a light output power (LOP) of 13 mW at 15 mA, which is 35% higher than that of LEDs with a conventional last quantum barrier (CLQB) GaN layer. In addition, the forward voltage of the green LED with the SLQB is reduced by 0.16 V compared with green LEDs with the CLQB. Simulation results demonstrate that the AlN layer in the SLQB increases the effective barrier height for electrons and alleviates the electron leakage effect. It also enables an intraband tunneling process for holes to inject into the active region, promoting the hole injection efficiency. As a result, we successfully obtain InGaN-based green LEDs with remarkably improved carrier injection efficiency by adopting the SLQB structure.

Understanding the plasmon-enhanced photothermal effect of a polarized laser on metal nanowires.

Improving photothermal efficiency can reduce the melting threshold of metal nanowires. The photothermal efficiency of a polarized laser to Cu nanowires was investigated by numerical simulation and experiment. Our simulation results reveal that the photothermal efficiency of a polarized laser depends on the intensity and distribution area of surface plasmons excited by the laser. As the angle between the polarization direction of the incident laser and the long axis of the Cu nanowire increases, the laser-excited surface plasmons shift from both ends to the sidewall of the Cu nanowire. Such a distribution of surface plasmons was confirmed by the melting behavior of Cu nanowires irradiated by a 450 nm polarized laser. Increasing the laser wavelength will enhance the intensity of the surface plasmons but reduce the distribution area of the surface plasmons. As a result, a higher photothermal efficiency was achieved using a laser with a polarization direction perpendicular to the long axis of the Cu nanowire and a wavelength less than 550 nm. Due to the higher photothermal efficiency, the melting threshold of Cu nanowire irradiated by a laser with polarization perpendicular to the long axis of the Cu nanowire is 32 mW, which is around 20% lower that of Cu nanowire irradiated by a laser with polarization parallel to the long axis of the Cu nanowire.

Strategically constructed patterned sapphire with silica array to boost substrate performance in GaN-based flip-chip visible light-emitting diodes.

A strategically constructed substrate, patterned sapphire with silica array (PSSA), was developed to boost the efficiency of patterned sapphire substrate (PSS) in GaN-based light-emitting diodes (LEDs) application. The light output power of a flip-chip LED on PSSA improved by 16.5% at 120 mA than that of device grown on PSS. The XRD and STEM measurements revealed that the GaN epilayer grown on PSSA had better crystalline quality compared to the epilayer grown on PSS, which was the result of decreased misfit at coalescence boundary in the PSSA case. Moreover, the light extraction efficiency of the flip-chip LED on PSSA was significantly enhanced, benefiting from the small refractive-index contrast between the patterned silica array and air. This small refractive-index contrast also contributed to a more convergent emission pattern for the flip-chip LED on PSSA, as demonstrated by the far-field radiation pattern measurements. The discovery that PSSA could excel at defect suppression and light extraction revealed a new substrate platform for III-nitride optoelectronic devices.

Scattering force and heating effect in laser-induced plasmonic welding of silver nanowire junctions.

Light-nanomaterial interaction is accompanied by a scattering force and a heating effect. When silver nanowires are irradiated by a laser pulse with light intensity above the melting threshold, they are observed to melt into nanospheres and fly away from their original position. Simulation and experimental results show that the localized surface plasmon resonance excited by laser pulse will heat the ends and junction areas of silver nanowires, causing the occurrence of local melting at these locations. Since the local melting cannot alter the position of silver nanowire, a mathematical model was developed to evaluate the scattering force acting on silver nanowire. According to the developed mathematical model, the scattering force acting on silver nanowire mainly depends on specific surface area of silver nanowire and incident light intensity. When the light intensity of the laser pulse is ${3.0} \times {{10}^{12}}\;{\rm W}/{{\rm m}^2}$3.0×1012W/m2, the scattering force acting on the silver nanowire can reach ${{10}^5}$105 times the gravity of silver nanowire. To obtain silver nanowires networks, the light intensity of the laser pulse was manipulated to regulate the scattering force and heating effect acting on the silver nanowire. As a result, silver nanowire networks were obtained with light intensity of ${1.4} \times {{10}^{10}}\;{\rm W}/{{\rm m}^2}$1.4×1010W/m2 at a scanning speed of 1000 mm/s. This laser-induced plasmonic welding paves the way for improved understanding and control of fundamental laser-nanomaterial interactions.

High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate.

High-power and reliable GaN-based vertical light-emitting diodes (V-LEDs) on 4-inch silicon substrate were fabricated and characterized in this article. The metallization scheme reliability was improved by depositing the Pt/Ti films that surround the compressed Ag/TiW films to protect it from environmental humidity. We demonstrated that although current crowding in V-LEDs was not as severe as that in lateral light-emitting diodes (L-LEDs), high current density around the opaque metal n-electrode in V-LEDs remained a problem. A SiO2 current blocking layer (CBL) was incorporated in V-LEDs to modify the current distribution. Roughening the emitting surface of V-LEDs with KOH and H3PO4 etchant was compared and the influence of surface roughening on the emission property of V-LEDs was studied. The high-power V-LEDs showed low forward voltage with small series resistance and high light output power (LOP) without saturation up to 1300 mA. Under 350 mA injection current, V-LEDs achieved an excellent light output power (LOP) of 501 mW with the peak emission wavelength at 453 nm. The prominent output performance of V-LEDs demonstrated in this work confirmed that integrating the optimized metallization scheme, SiO2 CBL and surface texturing by KOH wet etching is an effective approach to higher performance V-LEDs.

Highly efficient GaN-based high-power flip-chip light-emitting diodes.

High-power flip-chip light-emitting diodes (FCLEDs) suffer from low efficiencies because of poor p-type reflective ohmic contact and severe current crowding. Here, we show that it is possible to improve both the light extraction efficiency (LEE) and current spreading of an FCLED by incorporating a highly reflective metallic reflector made from silver (Ag). The reflector, which consists of an Ag film covered by three pairs of TiW/Pt multilayers, demonstrates high reflectance of 95.0% at 460 nm at arbitrary angles of incidence. Our numerical simulation and experimental results reveal that the FCLED with Ag-based reflector exhibits higher LEE and better current spreading than the FCLED with indium-tin oxide (ITO)/distributed Bragg reflector (DBR). As a result, the external quantum efficiency (EQE) of FCLED with Ag-based reflector was 6.0% higher than that of FCLED with ITO/DBR at 750 mA injection current. Our work also suggests that the EQE of FCLED with the Ag-based reflector could be further enhanced 5.2% by replacing the finger-like n-electrodes with three-dimensional (3D) vias n-electrodes, which spread the injection current uniformly over the entire light-emitting active region. This study paves the way towards higher-performance LED technology.