Black silicon Schottky photodetector in sub-bandgap near-infrared regime.

Sub-bandgap near-infrared silicon (Si) photodetectors are key elements in integrated Si photonics. We demonstrate such a Si photodetector based on a black Si (b-Si)/Ag nanoparticles (Ag-NPs) Schottky junction. This photodetector synergistically employs the mechanisms of inner photoemission, light-trapping, and surface-plasmon-enhanced absorption to efficiently absorb the sub-bandgap light and generate a photocurrent. The b-Si/Ag-NPs sample was prepared by means of wet chemical etching. Compared to those of a planar-Si/Ag thin-film Schottky photodetector, the responsivities of the b-Si/Ag-NPs photodetector were greatly enhanced, being 0.277 and 0.226 mA/W at a reversely biased voltage of 3 V for 1319- and 1550-nm light, respectively.

A porous Si-emitter crystalline-Si solar cell with 18.97% efficiency.

A p-n junction was made on p-type Si〈100〉 wafer (15 × 15 × 0.2 mm(3) in size) via phosphorous diffusion at 900 °C. Porous Si (PSi) with ultralow reflectivity (<0.3% in the ultraviolet and visible regimes) was achieved by etching a Ag-coated n(+) Si emitter in a solution of HF, H2O2 and H2O. The PSi was found to mainly consist of Si nanocrystallites with bandgap widths larger than that of bulk Si. Compared to other micro- or nanostructured Si-based crystalline-Si solar cells found in the literature, this PSi one possessed the feature of a graded band gap, which helped to suppress the surface recombination. In addition, the preparation method was readily applicable on large-scale-sized Si wafers. Also, the PSi acted as a down-shifter that absorbed the ultraviolet/violet light to which the Si solar cell responded poorly, and emitted a red one to which the cell responded well. Front and rear surface passivations were conducted by using SiO2 and Al2O3, respectively, to suppress the surface recombination and to facilitate the charge transfer. Indium-tin-oxide was used as the front electrode that was in good contact with the PSi, and Al was used as the rear one. For such a PSi-emitter crystalline-Si solar cell, enhancements of the photovoltaic responses from the ultraviolet to near-infrared regimes were observed; the open-circuit voltage was 606.8 mV, the short-circuit current density was 40.13 mA cm(-2), the fill factor was 0.779 and the conversion efficiency was 18.97%.

A synergetic application of surface plasmon and field effect to improve Si solar cell performance.

We report a synergetic application of surface plasmon (SP) and field effect (FE) to improve crystalline Si solar cell performance. The SPs are supported by small-sized Ag nanoparticles with an average diameter of 36.7 nm. The localized SP electromagnetic field from Ag nanoparticles excites extra electron-hole pairs at the surface region of the Si solar cell emitter, and meanwhile, the electron-hole pairs are detached by the electrostatic field that crosses the emitter surface. This synergism of SP and FE produces extra charges and enhances the Si solar cell efficiency. As compared to a Si solar cell applying SP and FE independently, a more than 10% efficiency enhancement is achieved by using them synergistically.

Enhancing photocatalysis in SrTiO3 by using Ag nanoparticles: A two-step excitation model for surface plasmon-enhanced photocatalysis.

Surface plasmon (SP)-enhanced ultraviolet and visible photocatalytic activities of SrTiO3 (STO) are observed after incorporating Ag nanoparticles (Ag-NPs) on STO surfaces. A two-step excitation model is proposed to explain the SP-enhanced photocatalysis. The point of the model is that an electron at the valence band of STO is first excited onto the Fermi level of Ag-NP by the SP field generated on the Ag-NP, and then injected into the conduction band of STO from the SP band, leaving a hole at the valence band of STO. A full redox catalytic reaction at the surface of STO is then available. For Ag-NP incorporated STO, up-converted and inter-band photoluminescence emissions of STO are observed, and nonlinear evolutions of photocatalytic activity with illumination light powers are found. Furthermore, near infrared photocatalysis is detected. These results support the proposed model.

Enhancing the brightness of Si nanocrystal light-emitting devices with electro-excited surface plasmons.

The use of electro-excited surface plasmons (SPs) in Ag nanoparticles (Ag-NPs) is shown to enhance the brightness of Si nanocrystal light-emitting devices (Si-NC LEDs). The Ag-NPs are prepared on the Si-NC thin film by ultrasonic irradiation and postannealing treatments. Electro-excited SPs on Ag-NPs are found, which are induced by electron impact on Ag-NPs and the front electrode Al layer during the charge injection process of LED. The electro-excited SPs enhance the electroluminescence of Si-NC, or LED brightness, via the SP field coupling to the exciton dipole moment of Si-NC. A maximal 5.2-fold brightness enhancement of Si-NC LED is achieved at the postannealing temperature of 200 °C. Remnant far-field radiations arising from electro-excited SPs are detected, which further supports the existence of such SPs.

[Expression of Class I integrase gene in Acinetobacter baumannii and drug-resistance].

OBJECTIVE: To explore the expression level of class I integrase (intI 1) mRNA in Acinetobacter baumannii from biofilm cells and planktonic cultured cells ,and to analyze the drug-resistance of Class I integron positive strains. METHODS: Acinetobacter baumannii were collected from hospitals,and Class I integron strains were screened by gene amplification. Total RNA of Class I integron positive strains was extracted, and the intI1 mRNA expression in the bioflim cells and planktonic cultured cells was measured by RT-PCR. Susceptibilities to antibiotics of Class I integron positive strains were also examined. RESULTS: The intI1 gene mRNA was expressed under 2 conditions, and the mRNA expressed in the biofilm cells was about 4 times higher than that in the planktonic cultured cells. Among the 64 strains of Acinetobacter baumannii, 46 strains were Class I integron positive strains. The antibiotic resistance of intI1 gene cassette-positive strains was higher than that of gene cassette-negative strains. CONCLUSION: The intI1 gene mRNA can be up-regulated in Acinetobacter baumannii biofilm cells.Class I integron plays an important role in drug resistance. It is much easier to capture gene cassettes for bacteria under biofilm condition.

An Investigation on a Crystalline-Silicon Solar Cell with Black Silicon Layer at the Rear.

Crystalline-Si (c-Si) solar cell with black Si (b-Si) layer at the rear was studied in order to develop c-Si solar cell with sub-band gap photovoltaic response. The b-Si was made by chemical etching. The c-Si solar cell with b-Si at the rear was found to perform far better than that of similar structure but with no b-Si at the rear, with the efficiency being increased relatively by 27.7%. This finding was interesting as b-Si had a large specific surface area, which could cause high surface recombination and degradation of solar cell performance. A graded band gap was found to form at the rear of the c-Si solar cell with b-Si layer at the rear. This graded band gap tended to expel free electrons away from the rear, thus reducing the probability of electron-hole recombination at b-Si and improving the performance of c-Si solar cell.

High Fill Factors of Si Solar Cells Achieved by Using an Inverse Connection Between MOS and PN Junctions.

Fill factors (FFs) of ~0.87 have been obtained for crystalline Si (c-Si) solar cells based on Ag front contacts after rapid thermal annealing. The usual single PN junction model fails to explain the high FF result. A metal/oxide/semiconductor (MOS) junction at the emitter is found to be inversely connected to the PN one, and when its barrier height/e is close to the open-circuit voltage of the solar cell, very high FF is obtainable. In this work, although the open-circuit voltage (<580 mV) is not high here, the efficiency of c-Si solar cell still reaches the state-of-the-art value (>20 %) due to the high FF achieved.

Metamorphic Testing for Cybersecurity.

Testing is a major approach for the detection of software defects, including vulnerabilities in security features. This article introduces metamorphic testing (MT), a relatively new testing method, and discusses how the new perspective of MT can help to conduct negative testing as well as to alleviate the oracle problem in the testing of security-related functionality and behavior. As demonstrated by the effectiveness of MT in detecting previously unknown bugs in real-world critical applications such as compilers and code obfuscators, we conclude that software testing of security-related features should be conducted from diverse perspectives in order to achieve greater cybersecurity.