Flexible Pressure Sensors with a Wide Detection Range Based on Self-Assembled Polystyrene Microspheres.

Flexible pressure sensors are important components of electronic skin and flexible wearable devices. Most existing piezoresistive flexible pressure sensors have obtained high sensitivities, however, they have relatively small pressure detection ranges. Here, we report flexible pressure sensors with a wide detection range using polydimethylsiloxane (PDMS) as the substrate, carbon nanotube films as the electrode material, and self-assembled polystyrene microsphere film as the microstructure layer. The obtained pressure sensor had a sandwich structure, and had a wide pressure detection range (from 4 kPa to 270 kPa), a sensitivity of 2.49 kPa-1, and a response time of tens of milliseconds. Two hundred load-unload cycles indicated that the device had good stability. In addition, the sensor was obtained by large-area fabrication with a low power consumption. This pressure sensor is expected to be widely used in applications such as electronic skin and flexible wearable devices.

A photon-controlled diode with a new signal-processing behavior.

The photodetector is a key component in optoelectronic integrated circuits. Although there are various device structures and mechanisms, the output current changes either from rectified to fully-on or from fully-off to fully-on after illumination. A device that changes the output current from fully-off to rectified should be possible. We report the first photon-controlled diode based on a n/n- molybdenum disulfide junction. Schottky junctions formed at the cathode and anode either prevent or allow the device to be rectifying, so that the output current of the device changes from fully-off to rectified. By increasing the thickness of the photogating layer, the behavior of the device changes from a photodetector to a multifunctional photomemory with the highest non-volatile responsivity of 4.8 × 107 A/W and the longest retention time of 6.5 × 106 s reported so far. Furthermore, a 3 × 3 photomemory array without selectors shows no crosstalk between adjacent devices and has optical signal-processing functions including wavelength and power-density selectivity.

Patterning of Wafer-Scale MXene Films for High-Performance Image Sensor Arrays.

As a rapidly growing family of 2D transition metal carbides and nitrides, MXenes are recognized as promising materials for the development of future electronics and optoelectronics. So far, the reported patterning methods for MXene films lack efficiency, resolution, and compatibility, resulting in limited device integration and performance. Here, a high-performance MXene image sensor array fabricated by a wafer-scale combination patterning method of an MXene film is reported. This method combines MXene centrifugation, spin-coating, photolithography, and dry-etching and is highly compatible with mainstream semiconductor processing, with a resolution up to 2 µm, which is at least 100 times higher than other large-area patterning methods reported previously. As a result, a high-density integrated array of 1024-pixel Ti3 C2 Tx /Si photodetectors with a detectivity of 7.73 × 1014 Jones and a light-dark current ratio (Ilight /Idark ) of 6.22 × 106 , which is the ultrahigh value among all reported MXene-based photodetectors, is fabricated. This patterning technique paves a way for large-scale high-performance MXetronics compatible with mainstream semiconductor processes.

An ultrasensitive molybdenum-based double-heterojunction phototransistor.

Two-dimensional (2D) materials are promising for next-generation photo detection because of their exceptional properties such as a strong interaction with light, electronic and optical properties that depend on the number of layers, and the ability to form hybrid structures. However, the intrinsic detection ability of 2D material-based photodetectors is low due to their atomic thickness. Photogating is widely used to improve the responsivity of devices, which usually generates large noise current, resulting in limited detectivity. Here, we report a molybdenum-based phototransistor with MoS2 channel and α-MoO3-x contact electrodes. The device works in a photo-induced barrier-lowering (PIBL) mechanism and its double heterojunctions between the channel and the electrodes can provide positive feedback to each other. As a result, a detectivity of 9.8 × 1016 cm Hz1/2 W-1 has been achieved. The proposed double heterojunction PIBL mechanism adds to the techniques available for the fabrication of 2D material-based phototransistors with an ultrahigh photosensitivity.

A flexible ultrasensitive optoelectronic sensor array for neuromorphic vision systems.

The challenges of developing neuromorphic vision systems inspired by the human eye come not only from how to recreate the flexibility, sophistication, and adaptability of animal systems, but also how to do so with computational efficiency and elegance. Similar to biological systems, these neuromorphic circuits integrate functions of image sensing, memory and processing into the device, and process continuous analog brightness signal in real-time. High-integration, flexibility and ultra-sensitivity are essential for practical artificial vision systems that attempt to emulate biological processing. Here, we present a flexible optoelectronic sensor array of 1024 pixels using a combination of carbon nanotubes and perovskite quantum dots as active materials for an efficient neuromorphic vision system. The device has an extraordinary sensitivity to light with a responsivity of 5.1 × 107 A/W and a specific detectivity of 2 × 1016 Jones, and demonstrates neuromorphic reinforcement learning by training the sensor array with a weak light pulse of 1 µW/cm2.

A FinFET with one atomic layer channel.

Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During the past decades, the width of fin (W[Formula: see text]) in FinFETs has shrunk from about 150 nm to a few nanometers. However, W[Formula: see text] seems to have been levelling off in recent years, owing to the limitation of lithography precision. Here, we show that by adapting a template-growth method, different types of mono-layered two-dimensional crystals are isolated in a vertical manner. Based on this, FinFETs with one atomic layer fin are obtained, with on/off ratios reaching [Formula: see text]. Our findings push the FinFET to the sub 1 nm fin-width limit, and may shed light on the next generation nanoelectronics for higher integration and lower power consumption.

A Flexible Carbon Nanotube Sen-Memory Device.

In a modern electronics system, charge-coupled devices and data storage devices are the two most indispensable components. Although there has been rapid and independent progress in their development during the last three decades, a cofunctionality of both sensing and memory at single-unit level is yet premature for flexible electronics. For wearable electronics that work in ultralow power conditions and involve strains, conventional sensing-and-memory systems suffer from low sensitivity and are not able to directly transform sensed information into sufficient memory. Here, a new transformative device is demonstrated, which is called "sen-memory", that exhibits the dual functionality of sensing and memory in a monolithic integrated circuit. The active channel of the device is formed by a carbon nanotube thin film and the floating gate is formed by a controllably oxidized aluminum nanoparticle array for electrical- and optical-programming. The device exhibits a high on-off current ratio of ≈106 , a long-term retention of ≈108 s, and durable flexibility at a bending strain of 0.4%. It is shown that the device senses a photogenerated pattern in seconds at zero bias and memorizes an image for a couple of years.

Flexible 64 × 64 Pixel AMOLED Displays Driven by Uniform Carbon Nanotube Thin-Film Transistors.

Carbon nanotube (CNT) thin-film transistors are expected to be promising for use in flexible electronics including flexible and transparent integrated circuits and in wearable chemical and physical sensors and for driving the circuits of flexible display panels. However, current devices based on CNT channels suffer from poor performance uniformity and low manufacturing yield; therefore, they are still far from being practical. This is usually caused by nonuniform deposition of the semiconducting CNTs and the rough surface of flexible substrates. Here, we report CNT thin-film transistors (TFTs) driving a flexible 64 × 64 pixel active matrix light-emitting diode display (AMOLED) by improving the formation of uniform CNT films and developing a new pretreatment technique for flexible substrates. The achieved AMOLED has uniform brightness and a high yield of 99.93% in its 4096 pixels. More than 8000 TFTs with high-purity semiconducting CNTs as the channel material show an average on-off current ratio of ∼107 and a carrier mobility of 16 cm2 V-1 s-1. The standard deviations of the on-state current and the carrier mobility are 4.1 and 6.5%, respectively. Our result shows that the panel driven by high-purity semiconducting CNTs is a promising strategy for the development of next-generation flexible, large-area displays.

Continuous Fabrication of Meter-Scale Single-Wall Carbon Nanotube Films and their Use in Flexible and Transparent Integrated Circuits.

Single-wall carbon nanotubes (SWCNTs), especially in the form of large-area and high-quality thin films, are a promising material for use in flexible and transparent electronics. Here, a continuous synthesis, deposition, and transfer technique is reported for the fabrication of meter-scale SWCNT thin films, which have an excellent optoelectrical performance including a low sheet resistance of 65 Ω/◽ with a transmittance of 90% at a wavelength of 550 nm. Using these SWCNT thin films, high-performance all-CNT thin-film transistors and integrated circuits are demonstrated, including 101-stage ring oscillators. The results pave the way for the future development of large-scale, flexible, and transparent electronics based on CNT thin films.

High-Throughput Fabrication of Flexible and Transparent All-Carbon Nanotube Electronics.

This study reports a simple and effective technique for the high-throughput fabrication of flexible all-carbon nanotube (CNT) electronics using a photosensitive dry film instead of traditional liquid photoresists. A 10 in. sized photosensitive dry film is laminated onto a flexible substrate by a roll-to-roll technology, and a 5 µm pattern resolution of the resulting CNT films is achieved for the construction of flexible and transparent all-CNT thin-film transistors (TFTs) and integrated circuits. The fabricated TFTs exhibit a desirable electrical performance including an on-off current ratio of more than 105, a carrier mobility of 33 cm2 V-1 s-1, and a small hysteresis. The standard deviations of on-current and mobility are, respectively, 5% and 2% of the average value, demonstrating the excellent reproducibility and uniformity of the devices, which allows constructing a large noise margin inverter circuit with a voltage gain of 30. This study indicates that a photosensitive dry film is very promising for the low-cost, fast, reliable, and scalable fabrication of flexible and transparent CNT-based integrated circuits, and opens up opportunities for future high-throughput CNT-based printed electronics.