Determination of complex dielectric functions at HfO(2)/Si interface by using STEM-VEELS.

Park, Jucheol; Yang, Mino

Park, Jucheol; Yang, Mino.

Affiliation

Park J; Analytical Engineering Center, Samsung Advanced Institute of Technology, Giheung-Gu, Yongin-si, Gyeonggi-do 446-712, Republic of Korea. jucheol.park@samsung.com

Micron ; 40(3): 365-9, 2009 Apr.

Article in En | MEDLINE | ID: mdl-19036595

Subject(s)

Hafnium/chemistry; Oxides/chemistry; Silicon/chemistry; Algorithms; Microscopy, Electron, Scanning/methods; Molecular Structure; Refractometry; Semiconductors; Spectroscopy, Electron Energy-Loss/methods

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Full text: 1 Database: MEDLINE Main subject: Oxides / Silicon / Hafnium Language: En Journal: Micron Journal subject: DIAGNOSTICO POR IMAGEM Year: 2009 Type: Article

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Full text: 1 Database: MEDLINE Main subject: Oxides / Silicon / Hafnium Language: En Journal: Micron Journal subject: DIAGNOSTICO POR IMAGEM Year: 2009 Type: Article