Organic nonvolatile resistive switching memory based on molecularly entrapped fullerene derivative within a diblock copolymer nanostructure. | Macromol Rapid Commun;34(4): 355-61, 2013 Feb 25. | MEDLINE

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Organic nonvolatile resistive switching memory based on molecularly entrapped fullerene derivative within a diblock copolymer nanostructure.

Jo, Hanju; Ko, Jieun; Lim, Jung Ah; Chang, Hye Jung; Kim, Youn Sang.

Affiliation

Jo H; Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742, Republic of Korea.

Macromol Rapid Commun ; 34(4): 355-61, 2013 Feb 25.

Article in En | MEDLINE | ID: mdl-23281144

Subject(s)

Fullerenes/chemistry; Nanostructures/chemistry; Polymethyl Methacrylate/chemistry; Polystyrenes/chemistry; Semiconductors; Electricity

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Full text: 1 Database: MEDLINE Main subject: Polystyrenes / Semiconductors / Polymethyl Methacrylate / Fullerenes / Nanostructures Language: En Journal: Macromol Rapid Commun Year: 2013 Type: Article

Search on Google

Full text: 1 Database: MEDLINE Main subject: Polystyrenes / Semiconductors / Polymethyl Methacrylate / Fullerenes / Nanostructures Language: En Journal: Macromol Rapid Commun Year: 2013 Type: Article