Study on the crystallization process of GaSb-Sb2Te3 pseudobinary films for phase-change random access memory. | J Nanosci Nanotechnol;13(2): 976-9, 2013 Feb. | MEDLINE

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Study on the crystallization process of GaSb-Sb2Te3 pseudobinary films for phase-change random access memory.

Lu, Yegang; Li, Simian; Song, Sannian; Song, Zhitang; Liu, Bo; Wen, Ting; Lai, Tianshu.

Affiliation

Lu Y; State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

J Nanosci Nanotechnol ; 13(2): 976-9, 2013 Feb.

Article in En | MEDLINE | ID: mdl-23646553

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Database: MEDLINE Type of study: Clinical_trials Language: En Journal: J Nanosci Nanotechnol Year: 2013 Type: Article Affiliation country: China

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Database: MEDLINE Type of study: Clinical_trials Language: En Journal: J Nanosci Nanotechnol Year: 2013 Type: Article Affiliation country: China