The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties.

Park, Jozeph; Jeong, Hyun-Jun; Lee, Hyun-Mo; Nahm, Ho-Hyun; Park, Jin-Seong.

Affiliation

Park J; Department of Materials Science and Engineering, KAIST, Daejeon, 34141, Republic of Korea.
Jeong HJ; R&D Center, Samsung Display, Yongin, 17113, Republic of Korea.
Lee HM; Department of Materials Science and Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
Nahm HH; Department of Materials Science and Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
Park JS; Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea. hohyunnahm@snu.ac.kr.

Sci Rep ; 7(1): 2111, 2017 05 18.

Article in En | MEDLINE | ID: mdl-28522801

Full text: 1 Database: MEDLINE Language: En Journal: Sci Rep Year: 2017 Type: Article

Full text: 1 Database: MEDLINE Language: En Journal: Sci Rep Year: 2017 Type: Article