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Charge Transfer Effects in Naturally Occurring van der Waals Heterostructures (PbSe)_{1.16}(TiSe_{2})_{m} (m=1, 2).
Yao, Q; Shen, D W; Wen, C H P; Hua, C Q; Zhang, L Q; Wang, N Z; Niu, X H; Chen, Q Y; Dudin, P; Lu, Y H; Zheng, Y; Chen, X H; Wan, X G; Feng, D L.
Affiliation
  • Yao Q; State Key Laboratory of Surface Physics, Department of Physics, and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China.
  • Shen DW; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China.
  • Wen CHP; Collaborative Innovation Centre of Advanced Microstructures, Nanjing 210093, China.
  • Hua CQ; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China.
  • Zhang LQ; CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China.
  • Wang NZ; State Key Laboratory of Surface Physics, Department of Physics, and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China.
  • Niu XH; Collaborative Innovation Centre of Advanced Microstructures, Nanjing 210093, China.
  • Chen QY; Department of Physics, Zhejiang University, Hangzhou 310027, China.
  • Dudin P; Collaborative Innovation Centre of Advanced Microstructures, Nanjing 210093, China.
  • Lu YH; National Laboratory of Solid State Microstructures, College of Physics, Nanjing University, Nanjing 210093, China.
  • Zheng Y; Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics and Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China.
  • Chen XH; State Key Laboratory of Surface Physics, Department of Physics, and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China.
  • Wan XG; Collaborative Innovation Centre of Advanced Microstructures, Nanjing 210093, China.
  • Feng DL; State Key Laboratory of Surface Physics, Department of Physics, and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China.
Phys Rev Lett ; 120(10): 106401, 2018 Mar 09.
Article in En | MEDLINE | ID: mdl-29570327
van der Waals heterostructures (VDWHs) exhibit rich properties and thus has potential for applications, and charge transfer between different layers in a heterostructure often dominates its properties and device performance. It is thus critical to reveal and understand the charge transfer effects in VDWHs, for which electronic structure measurements have proven to be effective. Using angle-resolved photoemission spectroscopy, we studied the electronic structures of (PbSe)_{1.16}(TiSe_{2})_{m} (m=1, 2), which are naturally occurring VDWHs, and discovered several striking charge transfer effects. When the thickness of the TiSe_{2} layers is halved from m=2 to m=1, the amount of charge transferred increases unexpectedly by more than 250%. This is accompanied by a dramatic drop in the electron-phonon interaction strength far beyond the prediction by first-principles calculations and, consequently, superconductivity only exists in the m=2 compound with strong electron-phonon interaction, albeit with lower carrier density. Furthermore, we found that the amount of charge transferred in both compounds is nearly halved when warmed from below 10 K to room temperature, due to the different thermal expansion coefficients of the constituent layers of these misfit compounds. These unprecedentedly large charge transfer effects might widely exist in VDWHs composed of metal-semiconductor contacts; thus, our results provide important insights for further understanding and applications of VDWHs.

Full text: 1 Database: MEDLINE Language: En Journal: Phys Rev Lett Year: 2018 Type: Article Affiliation country: China

Full text: 1 Database: MEDLINE Language: En Journal: Phys Rev Lett Year: 2018 Type: Article Affiliation country: China