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Gateless and reversible carrier density tunability in epitaxial graphene devices functionalized with chromium tricarbonyl.
Rigosi, Albert F; Kruskopf, Mattias; Hill, Heather M; Jin, Hanbyul; Wu, Bi-Yi; Johnson, Philip E; Zhang, Siyuan; Berilla, Michael; Hight Walker, Angela R; Hacker, Christina A; Newell, David B; Elmquist, Randolph E.
Affiliation
  • Rigosi AF; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.
  • Kruskopf M; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.
  • Hill HM; Joint Quantum Institute, University of Maryland, College Park, MD 20742, USA.
  • Jin H; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.
  • Wu BY; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.
  • Johnson PE; Joint Quantum Institute, University of Maryland, College Park, MD 20742, USA.
  • Zhang S; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.
  • Berilla M; Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan.
  • Hight Walker AR; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.
  • Hacker CA; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.
  • Newell DB; Theiss Research, La Jolla, CA 92037, United States.
  • Elmquist RE; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.
Carbon N Y ; 1422019.
Article in En | MEDLINE | ID: mdl-31097837
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Full text: 1 Database: MEDLINE Language: En Journal: Carbon N Y Year: 2019 Type: Article Affiliation country: United States
Fulltext
Add to My VHL
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Full text: 1 Database: MEDLINE Language: En Journal: Carbon N Y Year: 2019 Type: Article Affiliation country: United States