Effect of layer and stacking sequence in simultaneously grown 2H and 3R WS<sub>2</sub> atomic layers. | Nanotechnology;30(34): 345203, 2019 Aug 23. | MEDLINE

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Effect of layer and stacking sequence in simultaneously grown 2H and 3R WS₂ atomic layers.

Yang, Ruilong; Feng, Shanghuai; Lei, Xunyong; Mao, Xiaoyu; Nie, Anmin; Wang, Bochong; Luo, Kun; Xiang, Jianyong; Wen, Fusheng; Mu, Congpu; Zhao, Zhisheng; Xu, Bo; Zeng, Hualing; Tian, Yongjun; Liu, Zhongyuan.

Affiliation

Yang R; Center for High Pressure Science, State Key Lab of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, People's Republic of China.

Nanotechnology ; 30(34): 345203, 2019 Aug 23.

Article in En | MEDLINE | ID: mdl-31108474

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Full text: 1 Database: MEDLINE Language: En Journal: Nanotechnology Year: 2019 Type: Article

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Full text: 1 Database: MEDLINE Language: En Journal: Nanotechnology Year: 2019 Type: Article