Quantum Interferometry with a g-Factor-Tunable Spin Qubit.
Phys Rev Lett
; 122(20): 207703, 2019 May 24.
Article
in En
| MEDLINE
| ID: mdl-31172762
ABSTRACT
We study quantum interference effects of a qubit whose energy levels are continuously modulated. The qubit is formed by an impurity electron spin in a silicon tunneling field-effect transistor, and it is read out by spin blockade in a double-dot configuration. The qubit energy levels are modulated via its gate-voltage-dependent g factors, with either rectangular, sinusoidal, or ramp radio frequency waves. The energy-modulated qubit is probed by the electron spin resonance. Our results demonstrate the potential of spin qubit interferometry implemented in a silicon device and operated at a relatively high temperature.
Full text:
1
Database:
MEDLINE
Language:
En
Journal:
Phys Rev Lett
Year:
2019
Type:
Article
Affiliation country:
Japan