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New Power MOSFET with Beyond-1D-Limit RSP-BV Trade-Off and Superior Reverse Recovery Characteristics.
Zhang, Meng; Li, Baikui; Wei, Jin.
Affiliation
  • Zhang M; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
  • Li B; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
  • Wei J; Institute of Microelectronics, Peking University, Beijing 100871, China.
Materials (Basel) ; 13(11)2020 Jun 05.
Article in En | MEDLINE | ID: mdl-32516987
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Full text: 1 Database: MEDLINE Language: En Journal: Materials (Basel) Year: 2020 Type: Article Affiliation country: China
Fulltext
Add to My VHL
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Full text: 1 Database: MEDLINE Language: En Journal: Materials (Basel) Year: 2020 Type: Article Affiliation country: China