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Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs.
Gu, Jie; Zhang, Qingzhu; Wu, Zhenhua; Yao, Jiaxin; Zhang, Zhaohao; Zhu, Xiaohui; Wang, Guilei; Li, Junjie; Zhang, Yongkui; Cai, Yuwei; Xu, Renren; Xu, Gaobo; Xu, Qiuxia; Yin, Huaxiang; Luo, Jun; Wang, Wenwu; Ye, Tianchun.
Affiliation
  • Gu J; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China.
  • Zhang Q; School of Electronic, Electrical and Communication Engineering, University of the Chinese Academy of Sciences, Beijing 100049, China.
  • Wu Z; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China.
  • Yao J; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China.
  • Zhang Z; School of Electronic, Electrical and Communication Engineering, University of the Chinese Academy of Sciences, Beijing 100049, China.
  • Zhu X; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China.
  • Wang G; School of Electronic, Electrical and Communication Engineering, University of the Chinese Academy of Sciences, Beijing 100049, China.
  • Li J; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China.
  • Zhang Y; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China.
  • Cai Y; School of Electronic, Electrical and Communication Engineering, University of the Chinese Academy of Sciences, Beijing 100049, China.
  • Xu R; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China.
  • Xu G; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China.
  • Xu Q; School of Electronic, Electrical and Communication Engineering, University of the Chinese Academy of Sciences, Beijing 100049, China.
  • Yin H; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China.
  • Luo J; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China.
  • Wang W; School of Electronic, Electrical and Communication Engineering, University of the Chinese Academy of Sciences, Beijing 100049, China.
  • Ye T; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China.
Nanomaterials (Basel) ; 11(2)2021 Jan 26.
Article in En | MEDLINE | ID: mdl-33530292
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Full text: 1 Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2021 Type: Article Affiliation country: China
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Full text: 1 Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2021 Type: Article Affiliation country: China