Charge-transfer-induced 2D ferromagnetism and realization of thermo-remnant memory effect in ultrathin<i>ß</i>-NiOOH-encapsulated graphene.

Charge-transfer-induced 2D ferromagnetism and realization of thermo-remnant memory effect in ultrathinß-NiOOH-encapsulated graphene.

Bhattacharya, Shatabda; Choi, Woojin; Ghosh, Antara; Lee, Sungwoo; Lee, Gun-Do; Kim, Sang-Koog.

Affiliation

Bhattacharya S; National Creative Research Initiative Center for Spin Dynamics and Spin-Wave Devices, Nanospinics Laboratory, Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
Choi W; Department of Materials Science and Engineering, Seoul National University, Gwanak-gu, Seoul 08826, Republic of Korea.
Ghosh A; Microbiology and Microbial Biotechnology, Department of Botany, The University of Burdwan, West Bengal, 713104, India.
Lee S; Department of Materials Science and Engineering, Seoul National University, Gwanak-gu, Seoul 08826, Republic of Korea.
Lee GD; Research Institute of Advanced Materials, Seoul National University, Gwanak-gu, Seoul 08826, Republic of Korea.
Kim SK; Department of Materials Science and Engineering, Seoul National University, Gwanak-gu, Seoul 08826, Republic of Korea.

Nanotechnology ; 32(38)2021 Jul 02.

Article in En | MEDLINE | ID: mdl-34130260