Enhanced performance of an AlGaN-based deep ultraviolet light-emitting diode using a p<sup>+</sup>-GaN/SiO<sub>2</sub>/ITO tunnel junction.

Enhanced performance of an AlGaN-based deep ultraviolet light-emitting diode using a p⁺-GaN/SiO₂/ITO tunnel junction.

Che, Jiamang; Shao, Hua; Chu, Chunshuang; Li, Qingqing; Zhang, Yonghui; Sun, Xiaowei; Zhang, Zi-Hui.

Opt Lett ; 47(4): 798-801, 2022 Feb 15.

Article in En | MEDLINE | ID: mdl-35167528

Full text: 1 Database: MEDLINE Language: En Journal: Opt Lett Year: 2022 Type: Article

Full text: 1 Database: MEDLINE Language: En Journal: Opt Lett Year: 2022 Type: Article