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Multifunctional Magnetic Oxide-MoS2 Heterostructures on Silicon.
Yang, Allen Jian; Wu, Liang; Liu, Yanran; Zhang, Xinyu; Han, Kun; Huang, Ying; Li, Shengyao; Loh, Xian Jun; Zhu, Qiang; Su, Rui; Nan, Ce-Wen; Renshaw Wang, Xiao.
Affiliation
  • Yang AJ; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
  • Wu L; Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan, 650093, China.
  • Liu Y; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
  • Zhang X; Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan, 650093, China.
  • Han K; Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China.
  • Huang Y; State Key Laboratory of Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang, 621010, China.
  • Li S; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
  • Loh XJ; Institute of Materials Research and Engineering (IMRE), A*STAR, 2 Fusionopolis Way, Innovis, Singapore, 138634, Singapore.
  • Zhu Q; Institute of Materials Research and Engineering (IMRE), A*STAR, 2 Fusionopolis Way, Innovis, Singapore, 138634, Singapore.
  • Su R; School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore.
  • Nan CW; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
  • Renshaw Wang X; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 637371, Singapore.
Adv Mater ; 35(33): e2302620, 2023 Aug.
Article in En | MEDLINE | ID: mdl-37227936
ABSTRACT
Correlated oxides and related heterostructures are intriguing for developing future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging. Here, van der Waals heterostructures of La0.7 Sr0.3 MnO3 (LSMO) , a correlated manganite perovskite, and MoS2 are demonstrated on Si substrates with multiple functions. To overcome the problems due to the incompatible growth process, technologies involving freestanding LSMO membranes and van der Waals force-mediated transfer are used to fabricate the LSMO-MoS2 heterostructures. The LSMO-MoS2 heterostructures exhibit a gate-tunable rectifying behavior, based on which metal-semiconductor field-effect transistors (MESFETs) with on-off ratios of over 104 can be achieved. The LSMO-MoS2 heterostructures can function as photodiodes displaying considerable open-circuit voltages and photocurrents. In addition, the colossal magnetoresistance of LSMO endows the LSMO-MoS2 heterostructures with an electrically tunable magnetoresponse at room temperature. This work not only proves the applicability of the LSMO-MoS2 heterostructure devices on Si-based platform but also demonstrates a paradigm to create multifunctional heterostructures from materials with disparate properties.
Key words

Full text: 1 Database: MEDLINE Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2023 Type: Article Affiliation country: Singapore

Full text: 1 Database: MEDLINE Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2023 Type: Article Affiliation country: Singapore