Carrier Trap Density Reduction at SiO2/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres.
Materials (Basel)
; 16(12)2023 Jun 14.
Article
in En
| MEDLINE
| ID: mdl-37374564
Full text:
1
Database:
MEDLINE
Language:
En
Journal:
Materials (Basel)
Year:
2023
Type:
Article
Affiliation country:
Poland