A 3.06 µm Single-Photon Avalanche Diode Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-Resolution Photon Counting.

Ogi, Jun; Sano, Fumiaki; Nakata, Tatsuya; Kubo, Yoshiki; Onishi, Wataru; Koswaththage, Charith; Mochizuki, Takeya; Tashiro, Yoshiaki; Hizu, Kazuki; Takatsuka, Takafumi; Watanabe, Iori; Koga, Fumihiko; Hirano, Tomoyuki; Oike, Yusuke

Ogi, Jun; Sano, Fumiaki; Nakata, Tatsuya; Kubo, Yoshiki; Onishi, Wataru; Koswaththage, Charith; Mochizuki, Takeya; Tashiro, Yoshiaki; Hizu, Kazuki; Takatsuka, Takafumi; Watanabe, Iori; Koga, Fumihiko; Hirano, Tomoyuki; Oike, Yusuke.

Affiliation

Ogi J; Sony Semiconductor Solutions Corporation, Atsugi-shi 243-0014, Japan.
Sano F; Sony Semiconductor Solutions Corporation, Atsugi-shi 243-0014, Japan.
Nakata T; Sony Semiconductor Solutions Corporation, Atsugi-shi 243-0014, Japan.
Kubo Y; Sony Semiconductor Solutions Corporation, Atsugi-shi 243-0014, Japan.
Onishi W; Sony Semiconductor Solutions Corporation, Atsugi-shi 243-0014, Japan.
Koswaththage C; Sony Semiconductor Solutions Corporation, Atsugi-shi 243-0014, Japan.
Mochizuki T; Sony Semiconductor Solutions Corporation, Atsugi-shi 243-0014, Japan.
Tashiro Y; Sony Semiconductor Solutions Corporation, Atsugi-shi 243-0014, Japan.
Hizu K; Sony Semiconductor Solutions Corporation, Atsugi-shi 243-0014, Japan.
Takatsuka T; Sony Semiconductor Solutions Corporation, Atsugi-shi 243-0014, Japan.
Watanabe I; Sony Semiconductor Solutions Corporation, Atsugi-shi 243-0014, Japan.
Koga F; Sony Semiconductor Solutions Corporation, Atsugi-shi 243-0014, Japan.
Hirano T; Sony Semiconductor Solutions Corporation, Atsugi-shi 243-0014, Japan.
Oike Y; Sony Semiconductor Solutions Corporation, Atsugi-shi 243-0014, Japan.