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High energy density in artificial heterostructures through relaxation time modulation.
Han, Sangmoon; Kim, Justin S; Park, Eugene; Meng, Yuan; Xu, Zhihao; Foucher, Alexandre C; Jung, Gwan Yeong; Roh, Ilpyo; Lee, Sangho; Kim, Sun Ok; Moon, Ji-Yun; Kim, Seung-Il; Bae, Sanggeun; Zhang, Xinyuan; Park, Bo-In; Seo, Seunghwan; Li, Yimeng; Shin, Heechang; Reidy, Kate; Hoang, Anh Tuan; Sundaram, Suresh; Vuong, Phuong; Kim, Chansoo; Zhao, Junyi; Hwang, Jinyeon; Wang, Chuan; Choi, Hyungil; Kim, Dong-Hwan; Kwon, Jimin; Park, Jin-Hong; Ougazzaden, Abdallah; Lee, Jae-Hyun; Ahn, Jong-Hyun; Kim, Jeehwan; Mishra, Rohan; Kim, Hyung-Seok; Ross, Frances M; Bae, Sang-Hoon.
Affiliation
  • Han S; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Kim JS; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Park E; The Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Meng Y; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Xu Z; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Foucher AC; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Jung GY; The Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Roh I; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Lee S; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Kim SO; The Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Moon JY; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Kim SI; M.O.P. Materials, Seoul 07285, Republic of Korea.
  • Bae S; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Zhang X; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Park BI; Precision Biology Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Seo S; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Li Y; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Shin H; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Reidy K; The Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Hoang AT; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Sundaram S; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Vuong P; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Kim C; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
  • Zhao J; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Hwang J; School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea.
  • Wang C; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
  • Choi H; School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea.
  • Kim DH; CNRS, Georgia Tech - CNRS IRL 2958, GT-Europe, 57070 Metz, France.
  • Kwon J; CNRS, Georgia Tech - CNRS IRL 2958, GT-Europe, 57070 Metz, France.
  • Park JH; The Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Ougazzaden A; Department of Electrical and System Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Lee JH; The Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Ahn JH; Department of Electrical and System Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Kim J; Energy Storage Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea.
  • Mishra R; The Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Kim HS; Department of Electrical and System Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA.
  • Ross FM; M.O.P. Materials, Seoul 07285, Republic of Korea.
  • Bae SH; Precision Biology Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Science ; 384(6693): 312-317, 2024 Apr 19.
Article in En | MEDLINE | ID: mdl-38669572
ABSTRACT
Electrostatic capacitors are foundational components of advanced electronics and high-power electrical systems owing to their ultrafast charging-discharging capability. Ferroelectric materials offer high maximum polarization, but high remnant polarization has hindered their effective deployment in energy storage applications. Previous methodologies have encountered problems because of the deteriorated crystallinity of the ferroelectric materials. We introduce an approach to control the relaxation time using two-dimensional (2D) materials while minimizing energy loss by using 2D/3D/2D heterostructures and preserving the crystallinity of ferroelectric 3D materials. Using this approach, we were able to achieve an energy density of 191.7 joules per cubic centimeter with an efficiency greater than 90%. This precise control over relaxation time holds promise for a wide array of applications and has the potential to accelerate the development of highly efficient energy storage systems.
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Full text: 1 Database: MEDLINE Language: En Journal: Science Year: 2024 Type: Article Affiliation country: United States
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Full text: 1 Database: MEDLINE Language: En Journal: Science Year: 2024 Type: Article Affiliation country: United States