Nonvolatile gate effect in a ferroelectric-semiconductor quantum well.
Phys Rev Lett
; 97(24): 247601, 2006 Dec 15.
Article
en En
| MEDLINE
| ID: mdl-17280323
ABSTRACT
Field effect transistors with ferroelectric gates would make ideal rewritable nonvolatile memories were it not for the severe problems in integrating the ferroelectric oxide directly on the semiconductor channel. We propose a powerful way to avoid these problems using a gate material that is ferroelectric and semiconducting simultaneously. First, ferroelectricity in semiconductor (Cd,Zn)Te films is proven and studied using modified piezoforce scanning probe microscopy. Then, a rewritable field effect device is demonstrated by local poling of the (Cd,Zn)Te layer of a (Cd,Zn)Te/CdTe quantum well, provoking a reversible, nonvolatile change in the resistance of the 2D electron gas. The results point to a potential new family of nanoscale one-transistor memories.
Buscar en Google
Bases de datos:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Año:
2006
Tipo del documento:
Article
País de afiliación:
Suiza