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The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures.
Xiao, S Q; Wang, H; Zhao, Z C; Gu, Y Z; Xia, Y X; Wang, Z H.
Afiliación
  • Xiao SQ; Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China.
Opt Express ; 16(6): 3798-806, 2008 Mar 17.
Article en En | MEDLINE | ID: mdl-18542475
ABSTRACT
We report a transient lateral photoeffect (LPE) in thin metallic Co films deposited on n-type Si substrates with native SiO(2) surfaces. Under the nonuniform irradiation of a laser beam, the lateral phtovoltage (LPV) shows high sensitivity to the laser position in the metal film plane. This effect can be interpreted by the metal-semiconductor (MS) junction formed between metal and semiconductor. The LPV depends significantly on the thickness of Co film. The position sensitivity shows a peak value of 42.6 mV/mm for Co(2.8mn)-SiO(2)-Si and decreases greatly with the increase of the Co film thickness. We explain that by the shorting effect of the metallic film.
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Bases de datos: MEDLINE Asunto principal: Fotometría / Semiconductores / Silicio / Transductores / Cobalto / Dióxido de Silicio / Membranas Artificiales Idioma: En Revista: Opt Express Asunto de la revista: OFTALMOLOGIA Año: 2008 Tipo del documento: Article País de afiliación: China
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Bases de datos: MEDLINE Asunto principal: Fotometría / Semiconductores / Silicio / Transductores / Cobalto / Dióxido de Silicio / Membranas Artificiales Idioma: En Revista: Opt Express Asunto de la revista: OFTALMOLOGIA Año: 2008 Tipo del documento: Article País de afiliación: China