The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures.
Opt Express
; 16(6): 3798-806, 2008 Mar 17.
Article
en En
| MEDLINE
| ID: mdl-18542475
ABSTRACT
We report a transient lateral photoeffect (LPE) in thin metallic Co films deposited on n-type Si substrates with native SiO(2) surfaces. Under the nonuniform irradiation of a laser beam, the lateral phtovoltage (LPV) shows high sensitivity to the laser position in the metal film plane. This effect can be interpreted by the metal-semiconductor (MS) junction formed between metal and semiconductor. The LPV depends significantly on the thickness of Co film. The position sensitivity shows a peak value of 42.6 mV/mm for Co(2.8mn)-SiO(2)-Si and decreases greatly with the increase of the Co film thickness. We explain that by the shorting effect of the metallic film.
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Bases de datos:
MEDLINE
Asunto principal:
Fotometría
/
Semiconductores
/
Silicio
/
Transductores
/
Cobalto
/
Dióxido de Silicio
/
Membranas Artificiales
Idioma:
En
Revista:
Opt Express
Asunto de la revista:
OFTALMOLOGIA
Año:
2008
Tipo del documento:
Article
País de afiliación:
China