Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO2-based RRAM.

Long, Shibing; Perniola, Luca; Cagli, Carlo; Buckley, Julien; Lian, Xiaojuan; Miranda, Enrique; Pan, Feng; Liu, Ming; Suñé, Jordi

Long, Shibing; Perniola, Luca; Cagli, Carlo; Buckley, Julien; Lian, Xiaojuan; Miranda, Enrique; Pan, Feng; Liu, Ming; Suñé, Jordi.

Afiliación

Long S; 1] Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China [2] Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra 08193, Spain.

Sci Rep ; 3: 2929, 2013 Oct 14.

Article en En | MEDLINE | ID: mdl-24121547

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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2013 Tipo del documento: Article País de afiliación: España