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Organic field-effect transistors by a solvent vapor annealing process.
J Nanosci Nanotechnol ; 14(2): 1476-93, 2014 Feb.
Article en En | MEDLINE | ID: mdl-24749436
Organic field-effect transistor (OFET) attracts great interests from scientific research and industrial application because of its low-cost fabrication and excellent mechanical flexibility. Yet the charge carrier mobility of typical OFET is still around 1-5 cm2/Vs and needs to be further enhanced, ideally by cost effective processes or treatments. Here we review one of the straightforward but effective methods, solvent vapor annealing (SVA), to improve the crystallinity of organic semiconductor film leading enhancement of charge carrier mobility in OFETs. We start by introducing the basic mechanism of SVA, followed by experimental works on small molecules and then conjugated polymers. Along with those examples, we discuss the important factors in using SVA to form highly crystalline conjugated molecule films or organic single crystals to achieve high performance OFETs.
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Bases de datos: MEDLINE Asunto principal: Compuestos Orgánicos / Transistores Electrónicos / Nanotecnología / Nanoestructuras / Microelectrodos Idioma: En Revista: J Nanosci Nanotechnol Año: 2014 Tipo del documento: Article
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Bases de datos: MEDLINE Asunto principal: Compuestos Orgánicos / Transistores Electrónicos / Nanotecnología / Nanoestructuras / Microelectrodos Idioma: En Revista: J Nanosci Nanotechnol Año: 2014 Tipo del documento: Article