Optimizing the Dopant and Carrier Concentration of Ca5Al2Sb6 for High Thermoelectric Efficiency.

Yan, Yuli; Zhang, Guangbiao; Wang, Chao; Peng, Chengxiao; Zhang, Peihong; Wang, Yuanxu; Ren, Wei.

Afiliación

Yan Y; Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 75004, People's Republic of China.
Zhang G; Department of Physics, International Center for Quantum and Molecular Structures, and Materials Genome Institute, Shanghai University, Shanghai 200444, China.
Wang C; Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 75004, People's Republic of China.
Peng C; Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 75004, People's Republic of China.
Zhang P; Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 75004, People's Republic of China.
Wang Y; Department of Physics, International Center for Quantum and Molecular Structures, and Materials Genome Institute, Shanghai University, Shanghai 200444, China.
Ren W; Department of Physics, University at Buffalo, State University of New York, Buffalo, New York 14260, USA.

Sci Rep ; 6: 29550, 2016 07 13.

Article en En | MEDLINE | ID: mdl-27406178

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2016 Tipo del documento: Article

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2016 Tipo del documento: Article