Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability.

Lv, Weiming; Yang, Bingchao; Wang, Bochong; Wan, Wenhui; Ge, Yanfeng; Yang, Ruilong; Hao, Chunxue; Xiang, Jianyong; Zhang, Baoshun; Zeng, Zhongming; Liu, Zhongyuan

Lv, Weiming; Yang, Bingchao; Wang, Bochong; Wan, Wenhui; Ge, Yanfeng; Yang, Ruilong; Hao, Chunxue; Xiang, Jianyong; Zhang, Baoshun; Zeng, Zhongming; Liu, Zhongyuan.

Afiliación

Lv W; Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences , Suzhou 215123 , China.
Zhang B; Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences , Suzhou 215123 , China.
Zeng Z; Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics , Chinese Academy of Sciences , Suzhou 215123 , China.

ACS Appl Mater Interfaces ; 10(11): 9663-9668, 2018 Mar 21.

Article en En | MEDLINE | ID: mdl-29481035

Palabras clave

black phosphorus; doping; field-effect transistors; first-principles calculation; stability

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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2018 Tipo del documento: Article País de afiliación: China

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