Electrical characterization of single nanometer-wide Si fins in dense arrays.

Folkersma, Steven; Bogdanowicz, Janusz; Schulze, Andreas; Favia, Paola; Petersen, Dirch H; Hansen, Ole; Henrichsen, Henrik H; Nielsen, Peter F; Shiv, Lior; Vandervorst, Wilfried

Folkersma, Steven; Bogdanowicz, Janusz; Schulze, Andreas; Favia, Paola; Petersen, Dirch H; Hansen, Ole; Henrichsen, Henrik H; Nielsen, Peter F; Shiv, Lior; Vandervorst, Wilfried.

Afiliación

Folkersma S; IMEC, Kapeldreef 75, B-3000 Leuven, Belgium.
Bogdanowicz J; Instituut voor Kern- en Stralingsfysika, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium.
Schulze A; IMEC, Kapeldreef 75, B-3000 Leuven, Belgium.
Favia P; IMEC, Kapeldreef 75, B-3000 Leuven, Belgium.
Petersen DH; IMEC, Kapeldreef 75, B-3000 Leuven, Belgium.
Hansen O; Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech Building 345 East, DK-2800 Kgs. Lyngby, Denmark.
Henrichsen HH; Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech Building 345 East, DK-2800 Kgs. Lyngby, Denmark.
Nielsen PF; CAPRES A/S, Scion-DTU, Building 373, DK-2800 Kgs. Lyngby, Denmark.
Shiv L; CAPRES A/S, Scion-DTU, Building 373, DK-2800 Kgs. Lyngby, Denmark.
Vandervorst W; CAPRES A/S, Scion-DTU, Building 373, DK-2800 Kgs. Lyngby, Denmark.

Beilstein J Nanotechnol ; 9: 1863-1867, 2018.

Article en En | MEDLINE | ID: mdl-30013880

Palabras clave

critical dimension metrology; electrical characterization; finFET; micro four-point probe; sheet resistance

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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Beilstein J Nanotechnol Año: 2018 Tipo del documento: Article País de afiliación: Bélgica