Low-Operating-Voltage Resistive Memory Based on Bi1+Î´Fe0.95Zn0.05)O3 Films.

Li, Zhen; Yang, Zhengchun; Wu, Jiagang; Zhou, Baozeng; Bao, Qiwen; Zhang, Kailiang; Zhao, Jinshi; Wei, Jun

Low-Operating-Voltage Resistive Memory Based on Bi_1+Î´Fe_0.95Zn_0.05)O3 Films.

Li, Zhen; Yang, Zhengchun; Wu, Jiagang; Zhou, Baozeng; Bao, Qiwen; Zhang, Kailiang; Zhao, Jinshi; Wei, Jun.

Afiliación

Li Z; School of Electrical and Electronic Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China.
Yang Z; School of Electrical and Electronic Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China.
Wu J; Department of Materials Science, Sichuan University, Chengdu 610064, China.
Zhou B; School of Electrical and Electronic Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China.
Bao Q; School of Electrical and Electronic Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China.
Zhang K; School of Electrical and Electronic Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China.
Zhao J; School of Electrical and Electronic Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China.
Wei J; Singapore Institute of Manufacturing Technology, Agency for Science, Technology and Research (A*STAR), 71 Nanyang Drive 638075, Singapore.

J Nanosci Nanotechnol ; 19(1): 231-234, 2019 Jan 01.

Article en En | MEDLINE | ID: mdl-30327028

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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Año: 2019 Tipo del documento: Article País de afiliación: China