Experimental Observation of the Gate-Controlled Reversal of the Anomalous Hall Effect in the Intrinsic Magnetic Topological Insulator MnBi<sub>2</sub>Te<sub>4</sub> Device.

Zhang, Shuai; Wang, Rui; Wang, Xuepeng; Wei, Boyuan; Chen, Bo; Wang, Huaiqiang; Shi, Gang; Wang, Feng; Jia, Bin; Ouyang, Yiping; Xie, Faji; Fei, Fucong; Zhang, Minhao; Wang, Xuefeng; Wu, Di; Wan, Xiangang; Song, Fengqi; Zhang, Haijun; Wang, Baigeng

Experimental Observation of the Gate-Controlled Reversal of the Anomalous Hall Effect in the Intrinsic Magnetic Topological Insulator MnBi₂Te₄ Device.

Zhang, Shuai; Wang, Rui; Wang, Xuepeng; Wei, Boyuan; Chen, Bo; Wang, Huaiqiang; Shi, Gang; Wang, Feng; Jia, Bin; Ouyang, Yiping; Xie, Faji; Fei, Fucong; Zhang, Minhao; Wang, Xuefeng; Wu, Di; Wan, Xiangang; Song, Fengqi; Zhang, Haijun; Wang, Baigeng.

Afiliación

Zhang S; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics , Nanjing University , Nanjing 210093 , China.
Wang R; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics , Nanjing University , Nanjing 210093 , China.
Wang X; Department of Physics and Astronomy , Shanghai Jiao Tong University , Shanghai 200240 , China.
Wei B; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics , Nanjing University , Nanjing 210093 , China.
Chen B; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics , Nanjing University , Nanjing 210093 , China.
Wang H; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics , Nanjing University , Nanjing 210093 , China.
Shi G; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics , Nanjing University , Nanjing 210093 , China.
Wang F; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China.
Jia B; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics , Nanjing University , Nanjing 210093 , China.
Ouyang Y; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics , Nanjing University , Nanjing 210093 , China.
Xie F; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics , Nanjing University , Nanjing 210093 , China.
Fei F; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics , Nanjing University , Nanjing 210093 , China.
Zhang M; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics , Nanjing University , Nanjing 210093 , China.
Wang X; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics , Nanjing University , Nanjing 210093 , China.
Wu D; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China.
Wan X; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics , Nanjing University , Nanjing 210093 , China.
Song F; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics , Nanjing University , Nanjing 210093 , China.
Zhang H; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics , Nanjing University , Nanjing 210093 , China.
Wang B; National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics , Nanjing University , Nanjing 210093 , China.

Nano Lett ; 20(1): 709-714, 2020 Jan 08.

Article en En | MEDLINE | ID: mdl-31838853

ABSTRACT

ABSTRACT

Magnetic topological insulator, a platform for realizing quantum anomalous Hall effect, axion state, and other novel quantum transport phenomena, has attracted a lot of interest. Recently, it is proposed that MnBi2Te4 is an intrinsic magnetic topological insulator, which may overcome the disadvantages in the magnetic doped topological insulator, such as disorder. Here we report on the gate-reserved anomalous Hall effect (AHE) in the MnBi2Te4 thin film. By tuning the Fermi level using the top/bottom gate, the AHE loop gradually decreases to zero and the sign is reversed. The positive AHE exhibits distinct coercive fields compared with the negative AHE. It reaches a maximum inside the gap of the Dirac cone, and its amplitude exhibits a linear scaling with the longitudinal conductance. The positive AHE is attributed to the competition of the intrinsic Berry curvature and the extrinsic skew scattering. Its gate-controlled switching contributes a scheme for the topological spin field-effect transistors.

Palabras clave

Berry curvature; Magnetic topological insulator; anomalous Hall effect; sign reversal; skew scattering

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2020 Tipo del documento: Article País de afiliación: China