Localized Heating and Switching in MoTe<sub>2</sub>-Based Resistive Memory Devices.

Datye, Isha M; Rojo, Miguel Muñoz; Yalon, Eilam; Deshmukh, Sanchit; Mleczko, Michal J; Pop, Eric

Localized Heating and Switching in MoTe₂-Based Resistive Memory Devices.

Datye, Isha M; Rojo, Miguel Muñoz; Yalon, Eilam; Deshmukh, Sanchit; Mleczko, Michal J; Pop, Eric.

Afiliación

Datye IM; Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
Rojo MM; Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
Yalon E; Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
Deshmukh S; Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
Mleczko MJ; Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States.
Pop E; Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States.

Nano Lett ; 20(2): 1461-1467, 2020 Feb 12.

Article en En | MEDLINE | ID: mdl-31951419

Palabras clave

2D materials; MoTe2; bipolar switching; localized heating; resistive memory; scanning thermal microscopy

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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2020 Tipo del documento: Article País de afiliación: Estados Unidos