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Defect activated optical Raman modes in single layer MoSe2.
Cardoso Ofredi Maia, Fábio; Maciel, Indhira Oliveira; Vasconcelos Pazzini Massote, Daniel; Archanjo, Braulio Soares; Legnani, Cristiano; Quirino, Welber Gianini; Carozo Gois de Oliveira, Victor; Fragneaud, Benjamin.
Afiliación
  • Cardoso Ofredi Maia F; Physics Department, Federal University of Juiz de Fora (UFJF), Juiz de Fora, Minas Gerais, Brazil.
  • Maciel IO; Physics Department, Federal University of Juiz de Fora (UFJF), Juiz de Fora, Minas Gerais, Brazil.
  • Vasconcelos Pazzini Massote D; Physics Department, Federal University of Juiz de Fora (UFJF), Juiz de Fora, Minas Gerais, Brazil.
  • Archanjo BS; Materials Metrology Division, National Institute of Metrology, Quality, and Technology (INMETRO), Duque de Caxias, Rio de Janeiro, Brazil.
  • Legnani C; Physics Department, Federal University of Juiz de Fora (UFJF), Juiz de Fora, Minas Gerais, Brazil.
  • Quirino WG; Physics Department, Federal University of Juiz de Fora (UFJF), Juiz de Fora, Minas Gerais, Brazil.
  • Carozo Gois de Oliveira V; Physics Department, Pontifical Catholic University of Rio de Janeiro, Rio de Janeiro, Rio de Janeiro, Brazil.
  • Fragneaud B; Physics Department, Federal University of Juiz de Fora (UFJF), Juiz de Fora, Minas Gerais, Brazil.
Nanotechnology ; 32(46)2021 Aug 25.
Article en En | MEDLINE | ID: mdl-34311447
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Texto completo: 1 Bases de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nanotechnology Año: 2021 Tipo del documento: Article País de afiliación: Brasil
Texto completo
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Texto completo: 1 Bases de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nanotechnology Año: 2021 Tipo del documento: Article País de afiliación: Brasil