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Manipulation of current rectification in van der Waals ferroionic CuInP2S6.
Jiang, Xingan; Wang, Xueyun; Wang, Xiaolei; Zhang, Xiangping; Niu, Ruirui; Deng, Jianming; Xu, Sheng; Lun, Yingzhuo; Liu, Yanyu; Xia, Tianlong; Lu, Jianming; Hong, Jiawang.
Afiliación
  • Jiang X; School of Aerospace Engineering, Beijing Institute of Technology, 100081, Beijing, China.
  • Wang X; School of Aerospace Engineering, Beijing Institute of Technology, 100081, Beijing, China. xueyun@bit.edu.cn.
  • Wang X; College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, 100124, Beijing, China. xiaoleiwang@bjut.edu.cn.
  • Zhang X; School of Aerospace Engineering, Beijing Institute of Technology, 100081, Beijing, China.
  • Niu R; State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China.
  • Deng J; School of Aerospace Engineering, Beijing Institute of Technology, 100081, Beijing, China.
  • Xu S; Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, 100871, Beijing, China.
  • Lun Y; School of Aerospace Engineering, Beijing Institute of Technology, 100081, Beijing, China.
  • Liu Y; School of Aerospace Engineering, Beijing Institute of Technology, 100081, Beijing, China.
  • Xia T; College of Physics and Materials Science, Tianjin Normal University, 300387, Tianjin, PR China.
  • Lu J; Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, 100871, Beijing, China.
  • Hong J; State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China.
Nat Commun ; 13(1): 574, 2022 Jan 31.
Article en En | MEDLINE | ID: mdl-35102192
ABSTRACT
Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP2S6 as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu+ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2022 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2022 Tipo del documento: Article País de afiliación: China