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Observation of perfect diamagnetism and interfacial effect on the electronic structures in infinite layer Nd0.8Sr0.2NiO2 superconductors.
Zeng, S W; Yin, X M; Li, C J; Chow, L E; Tang, C S; Han, K; Huang, Z; Cao, Y; Wan, D Y; Zhang, Z T; Lim, Z S; Diao, C Z; Yang, P; Wee, A T S; Pennycook, S J; Ariando, A.
Afiliación
  • Zeng SW; Department of Physics, Faculty of Science, National University of Singapore, Singapore, 117551, Singapore. shengwei_zeng@u.nus.edu.
  • Yin XM; Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore, 117603, Singapore.
  • Li CJ; Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, Shanghai University, Shanghai, 200444, China.
  • Chow LE; Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
  • Tang CS; Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, Guangdong, China.
  • Han K; Department of Physics, Faculty of Science, National University of Singapore, Singapore, 117551, Singapore.
  • Huang Z; Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore, 117603, Singapore.
  • Cao Y; Institute of Materials Research and Engineering, A∗STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Singapore, 138634, Singapore.
  • Wan DY; Department of Physics, Faculty of Science, National University of Singapore, Singapore, 117551, Singapore.
  • Zhang ZT; Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, Anhui, China.
  • Lim ZS; Department of Physics, Faculty of Science, National University of Singapore, Singapore, 117551, Singapore.
  • Diao CZ; Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, Anhui, China.
  • Yang P; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
  • Wee ATS; Department of Physics, Faculty of Science, National University of Singapore, Singapore, 117551, Singapore.
  • Pennycook SJ; Department of Physics, Faculty of Science, National University of Singapore, Singapore, 117551, Singapore.
  • Ariando A; Department of Physics, Faculty of Science, National University of Singapore, Singapore, 117551, Singapore.
Nat Commun ; 13(1): 743, 2022 Feb 08.
Article en En | MEDLINE | ID: mdl-35136053
ABSTRACT
Nickel-based complex oxides have served as a playground for decades in the quest for a copper-oxide analog of the high-temperature superconductivity. They may provide clues towards understanding the mechanism and an alternative route for high-temperature superconductors. The recent discovery of superconductivity in the infinite-layer nickelate thin films has fulfilled this pursuit. However, material synthesis remains challenging, direct demonstration of perfect diamagnetism is still missing, and understanding of the role of the interface and bulk to the superconducting properties is still lacking. Here, we show high-quality Nd0.8Sr0.2NiO2 thin films with different thicknesses and demonstrate the interface and strain effects on the electrical, magnetic and optical properties. Perfect diamagnetism is achieved, confirming the occurrence of superconductivity in the films. Unlike the thick films in which the normal-state Hall-coefficient changes signs as the temperature decreases, the Hall-coefficient of films thinner than 5.5 nm remains negative, suggesting a thickness-driven band structure modification. Moreover, X-ray absorption spectroscopy reveals the Ni-O hybridization nature in doped infinite-layer nickelates, and the hybridization is enhanced as the thickness decreases. Consistent with band structure calculations on the nickelate/SrTiO3 heterostructure, the interface and strain effect induce a dominating electron-like band in the ultrathin film, thus causing the sign-change of the Hall-coefficient.

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2022 Tipo del documento: Article País de afiliación: Singapur

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2022 Tipo del documento: Article País de afiliación: Singapur