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THz MEMS Switch Design.
Feng, Yukang; Tsao, Han-Yu; Barker, N Scott.
Afiliación
  • Feng Y; Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA.
  • Tsao HY; Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA.
  • Barker NS; Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA.
Micromachines (Basel) ; 13(5)2022 May 08.
Article en En | MEDLINE | ID: mdl-35630211
ABSTRACT
In this work, an mm-wave/THz MEMS switch design process is presented. The challenges and solutions associated with the switch electrical design, modeling, fabrication, and test are explored and discussed. To investigate the feasibility of this design process, the switches are designed on both silicon and fused quartz substrate and then tested in the 140-750 GHz frequency range. The measurement fits design expectations and simulation well. At 750 GHz the measurement results from switches on both substrates have an ON state insertion loss of less than 3 dB and an OFF state isolation larger than 12 dB.
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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2022 Tipo del documento: Article País de afiliación: Estados Unidos

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2022 Tipo del documento: Article País de afiliación: Estados Unidos