2D Multiferroicity with Ferroelectric Switching Induced Spin-Constrained Photoelectricity.

Guo, Yilv; Yu, Xing; Zhang, Yehui; Zhang, Xiwen; Yuan, Shijun; Li, Yafei; Yang, Shengyuan A; Wang, Jinlan

Guo, Yilv; Yu, Xing; Zhang, Yehui; Zhang, Xiwen; Yuan, Shijun; Li, Yafei; Yang, Shengyuan A; Wang, Jinlan.

Afiliación

Guo Y; School of Physics, Southeast University, Nanjing 211189, China.
Yu X; Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore.
Zhang Y; School of Physics, Southeast University, Nanjing 211189, China.
Zhang X; School of Physics, Southeast University, Nanjing 211189, China.
Yuan S; School of Mechanism Engineering & School of Physics, Southeast University, Nanjing 211189, China.
Li Y; School of Physics, Southeast University, Nanjing 211189, China.
Yang SA; Jiangsu Collaborative Innovation Centre of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, School of Chemistry and Material Science, Nanjing Normal University, Nanjing 210023, China.
Wang J; Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore.

ACS Nano ; 16(7): 11174-11181, 2022 Jul 26.

Article en En | MEDLINE | ID: mdl-35816175

Palabras clave

First-principles calculations; multiferroic interface; spin polarization; spin-photoelectric memory; two-dimensional magnetic heterostructure

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2022 Tipo del documento: Article País de afiliación: China