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Heteroepitaxy of Large-Area, Monocrystalline Lead Halide Perovskite Films on Gallium Arsenide.
Kong, Deying; Zhang, Yu; Cheng, Dali; Wang, Enze; Zhang, Kaiyuan; Wang, Huachun; Liu, Kai; Yin, Lan; Sheng, Xing.
Afiliación
  • Kong D; School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Center for Flexible Electronics Technology, Tsinghua University, Beijing100084, China.
  • Zhang Y; Department of Physics, Tsinghua University, Beijing100084, China.
  • Cheng D; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Center for Flexible Electronics Technology, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing100084, China.
  • Wang E; School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Center for Flexible Electronics Technology, Tsinghua University, Beijing100084, China.
  • Zhang K; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Center for Flexible Electronics Technology, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing100084, China.
  • Wang H; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Center for Flexible Electronics Technology, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing100084, China.
  • Liu K; School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Center for Flexible Electronics Technology, Tsinghua University, Beijing100084, China.
  • Yin L; School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Center for Flexible Electronics Technology, Tsinghua University, Beijing100084, China.
  • Sheng X; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Center for Flexible Electronics Technology, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing100084, China.
ACS Appl Mater Interfaces ; 14(46): 52508-52515, 2022 Nov 23.
Article en En | MEDLINE | ID: mdl-36350274
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Texto completo: 1 Bases de datos: MEDLINE Tipo de estudio: Guideline Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article País de afiliación: China
Texto completo
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XML
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Texto completo: 1 Bases de datos: MEDLINE Tipo de estudio: Guideline Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article País de afiliación: China