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Centimetre-scale single crystal α-MoO3: oxygen assisted self-standing growth and low-energy consumption synaptic devices.
Shan, Xin; Wu, Zeyu; Xie, Yangyang; Lin, Xin; Zhou, Baozeng; Zhang, Yupeng; Yan, Xiaobing; Ren, Tianling; Wang, Fang; Zhang, Kailiang.
Afiliación
  • Shan X; School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
  • Wu Z; Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China. xyyhebut@163.com.
  • Xie Y; Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China. xyyhebut@163.com.
  • Lin X; Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China. xyyhebut@163.com.
  • Zhou B; Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China. xyyhebut@163.com.
  • Zhang Y; Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China. xyyhebut@163.com.
  • Yan X; Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China. xyyhebut@163.com.
  • Ren T; College of Electronic and Information Engineering, Hebei University, Baoding 071000, China.
  • Wang F; School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
  • Zhang K; Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China. xyyhebut@163.com.
Nanoscale ; 15(3): 1200-1209, 2023 Jan 19.
Article en En | MEDLINE | ID: mdl-36533724

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2023 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2023 Tipo del documento: Article País de afiliación: China