Electrically Driven Plasmons in Metal-Insulator-Semiconductor Tunnel Junctions: The Role of Silicon Amorphization.
Nano Lett
; 23(6): 2233-2238, 2023 Mar 22.
Article
en En
| MEDLINE
| ID: mdl-36856602
ABSTRACT
We investigate electrically driven plasmon (EDP) emission in metal-insulator-semiconductor tunnel junctions. We find that amorphization of the silicon crystal at a narrow region near the junction due to the applied voltage plays a critical role in determining the nature of the emission. Furthermore, we suggest that the change in the properties of the insulating layer above a threshold voltage determines the EDP spatial properties, from being spatially uniform when the device is subjected to low voltages, to a spotty pattern peaking at high voltages. We emphasize the role of the high-energy emission as an unambiguous tool for distinguishing between EDP and radiative recombination of electrons and holes in the semiconductor.
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MEDLINE
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En
Revista:
Nano Lett
Año:
2023
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Article
País de afiliación:
Israel