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All-electrical switching of a topological non-collinear antiferromagnet at room temperature.
Deng, Yongcheng; Liu, Xionghua; Chen, Yiyuan; Du, Zongzheng; Jiang, Nai; Shen, Chao; Zhang, Enze; Zheng, Houzhi; Lu, Hai-Zhou; Wang, Kaiyou.
Afiliación
  • Deng Y; State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Liu X; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Chen Y; State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Du Z; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Jiang N; Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China.
  • Shen C; International Quantum Academy, Shenzhen 518048, China.
  • Zhang E; Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China.
  • Zheng H; International Quantum Academy, Shenzhen 518048, China.
  • Lu HZ; State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
  • Wang K; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Natl Sci Rev ; 10(2): nwac154, 2023 Feb.
Article en En | MEDLINE | ID: mdl-36872930
Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics, as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interest. However, the all-electrical control of such systems at room temperature, a crucial step toward practical application, has not been reported. Here, using a small writing current density of around 5 × 106 A·cm-2, we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn3Sn, with a strong readout signal at room temperature in the Si/SiO2/Mn3Sn/AlOx structure, and without external magnetic field or injected spin current. Our simulations reveal that the switching originates from the current-induced intrinsic non-collinear spin-orbit torques in Mn3Sn itself. Our findings pave the way for the development of topological antiferromagnetic spintronics.
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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Natl Sci Rev Año: 2023 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Natl Sci Rev Año: 2023 Tipo del documento: Article País de afiliación: China