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Strong Electron-Phonon Coupling Mediates Carrier Transport in BiFeO3.
Ou, Zhenwei; Peng, Bin; Chu, Weibin; Li, Zhe; Wang, Cheng; Zeng, Yan; Chen, Hongyi; Wang, Qiuyu; Dong, Guohua; Wu, Yongyi; Qiu, Ruibin; Ma, Li; Zhang, Lili; Liu, Xiaoze; Li, Tao; Yu, Ting; Hu, Zhongqiang; Wang, Ti; Liu, Ming; Xu, Hongxing.
Afiliación
  • Ou Z; School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
  • Peng B; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Chu W; Key Laboratory of Computational Physical Sciences (Ministry of Education), Institute of Computational Physical Sciences, Fudan University, Shanghai, 200433, China.
  • Li Z; School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
  • Wang C; School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
  • Zeng Y; School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
  • Chen H; School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
  • Wang Q; Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China.
  • Dong G; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Wu Y; Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Qiu R; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Ma L; School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
  • Zhang L; Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China.
  • Liu X; School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
  • Li T; Wuhan Institute of Quantum Technology, Wuhan, 430206, China.
  • Yu T; Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Hu Z; School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
  • Wang T; Wuhan Institute of Quantum Technology, Wuhan, 430206, China.
  • Liu M; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Xu H; School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
Adv Sci (Weinh) ; 10(22): e2301057, 2023 Aug.
Article en En | MEDLINE | ID: mdl-37218529
ABSTRACT
The electron-phonon interaction is known as one of the major mechanisms determining electrical and thermal properties. In particular, it alters the carrier transport behaviors and sets fundamental limits to carrier mobility. Establishing how electrons interact with phonons and the resulting impact on the carrier transport property is significant for the development of high-efficiency electronic devices. Here, carrier transport behavior mediated by the electron-phonon coupling in BiFeO3 epitaxial thin films is directly observed. Acoustic phonons are generated by the inverse piezoelectric effect and coupled with photocarriers. Via the electron-phonon coupling, doughnut shape carrier distribution has been observed due to the coupling between hot carriers and phonons. The hot carrier quasi-ballistic transport length can reach 340 nm within 1 ps. The results suggest an effective approach to investigating the effects of electron-phonon interactions with temporal and spatial resolutions, which is of great importance for designing and improving electronic devices.
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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Año: 2023 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Año: 2023 Tipo del documento: Article País de afiliación: China