Probing Linear to Nonlinear Damping in 2D Semiconductor Nanoelectromechanical Resonators toward a Unified Quality Factor Model.

Zhang, Pengcheng; Jia, Yueyang; Liu, Zuheng; Zhou, Xin; Xiao, Dingbang; Chen, Ying; Jia, Hao; Yang, Rui

Zhang, Pengcheng; Jia, Yueyang; Liu, Zuheng; Zhou, Xin; Xiao, Dingbang; Chen, Ying; Jia, Hao; Yang, Rui.

Afiliación

Zhang P; University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China.
Jia Y; University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China.
Liu Z; University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China.
Zhou X; College of Intelligence Science, National University of Defense Technology, Changsha, Hunan 410073, China.
Xiao D; College of Intelligence Science, National University of Defense Technology, Changsha, Hunan 410073, China.
Chen Y; Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
Jia H; Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
Yang R; University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China.

Nano Lett ; 23(20): 9375-9382, 2023 Oct 25.

Article en En | MEDLINE | ID: mdl-37788247

Palabras clave

2D NEMS resonators; MoS2; MoTe2; dissipation model; nonlinear damping; ringdown measurements

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Texto completo: 1 Bases de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nano Lett Año: 2023 Tipo del documento: Article País de afiliación: China

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