Alternating BiI<sub>3</sub>-BiI van der Waals Photodetector with Low Dark Current and High-Performance Photodetection.

Mu, Haoran; Zhuang, Renzhong; Cui, Nan; Cai, Songhua; Yu, Wenzhi; Yuan, Jian; Zhang, Jingni; Liu, Hao; Mei, Luyao; He, Xiaoyue; Mei, Zengxia; Zhang, Guangyu; Bao, Qiaoliang; Lin, Shenghuang

Alternating BiI₃-BiI van der Waals Photodetector with Low Dark Current and High-Performance Photodetection.

Mu, Haoran; Zhuang, Renzhong; Cui, Nan; Cai, Songhua; Yu, Wenzhi; Yuan, Jian; Zhang, Jingni; Liu, Hao; Mei, Luyao; He, Xiaoyue; Mei, Zengxia; Zhang, Guangyu; Bao, Qiaoliang; Lin, Shenghuang.

Afiliación

Mu H; Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
Zhuang R; Fujian Provincial Key Laboratory of Welding Quality Intelligent Evaluation, Longyan University, Longyan 364012, P. R. China.
Cui N; Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
Cai S; Department of Applied Physics, The Hong Kong Polytechnic University, Hunghom, Kowloon 999077, Hong Kong, P. R. China.
Yu W; Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
Yuan J; School of Physics and Electronic Information, Huaibei Normal University, Huaibei 235000, P. R. China.
Zhang J; Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
Liu H; Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
Mei L; Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
He X; Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
Mei Z; Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
Zhang G; Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
Bao Q; Institute of Physics, Chinese Academy of Science, Beijing 100190, P. R. China.
Lin S; Institute of Energy Materials Science (IEMS), University of Shanghai for Science and Technology, Shanghai 200093, P. R. China.