Improving Strain-localized GaSe Single Photon Emitters with Electrical Doping.

Luo, Weijun; Puretzky, Alexander; Lawrie, Benjamin; Tan, Qishuo; Gao, Hongze; Swan, Anna K; Liang, Liangbo; Ling, Xi

Luo, Weijun; Puretzky, Alexander; Lawrie, Benjamin; Tan, Qishuo; Gao, Hongze; Swan, Anna K; Liang, Liangbo; Ling, Xi.

Afiliación

Luo W; Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States.
Puretzky A; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
Lawrie B; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
Tan Q; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
Gao H; Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States.
Swan AK; Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States.
Liang L; Department of Electrical Engineering, Boston University, Boston, Massachusetts 02215, United States.
Ling X; The Photonics Center, Boston University, Boston, Massachusetts 02215, United States.

Nano Lett ; 23(21): 9740-9747, 2023 Nov 08.

Article en En | MEDLINE | ID: mdl-37879097

Palabras clave

Fermi level; electrostatic doping; gallium selenide; single photon emission; strain engineering; two-dimensional materials

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Texto completo: 1 Bases de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2023 Tipo del documento: Article País de afiliación: Estados Unidos