State-of-the-art graphene high-frequency electronics.
Nano Lett
; 12(6): 3062-7, 2012 Jun 13.
Article
em En
| MEDLINE
| ID: mdl-22563820
ABSTRACT
High-performance graphene transistors for radio frequency applications have received much attention and significant progress has been achieved. However, devices based on large-area synthetic graphene, which have direct technological relevance, are still typically outperformed by those based on mechanically exfoliated graphene. Here, we report devices with intrinsic cutoff frequency above 300 GHz, based on both wafer-scale CVD grown graphene and epitaxial graphene on SiC, thus surpassing previous records on any graphene material. We also demonstrate devices with optimized architecture exhibiting voltage and power gains reaching 20 dB and a wafer-scale integrated graphene amplifier circuit with voltage amplification.
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1
Bases de dados:
MEDLINE
Assunto principal:
Transistores Eletrônicos
/
Nanotecnologia
/
Nanoestruturas
/
Grafite
Idioma:
En
Revista:
Nano Lett
Ano de publicação:
2012
Tipo de documento:
Article
País de afiliação:
Estados Unidos