Phenomenological analysis of random telegraph noise in amorphous TiOx-based bipolar resistive switching random access memory devices.

Lee, Jung-Kyu; Lee, Ju-Wan; Bae, Jong-Ho; Park, Jinwon; Chung, Sung-Woong; Roh, Jae Sung; Hong, Sung-Joo; Lee, Jong-Ho

Lee, Jung-Kyu; Lee, Ju-Wan; Bae, Jong-Ho; Park, Jinwon; Chung, Sung-Woong; Roh, Jae Sung; Hong, Sung-Joo; Lee, Jong-Ho.

Afiliação

Lee JK; School of Electrical Engineering and Computer Science (EECS) and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-742, Republic of Korea.

J Nanosci Nanotechnol ; 12(7): 5392-6, 2012 Jul.

Article em En | MEDLINE | ID: mdl-22966577

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Bases de dados: MEDLINE Tipo de estudo: Clinical_trials / Qualitative_research Idioma: En Revista: J Nanosci Nanotechnol Ano de publicação: 2012 Tipo de documento: Article

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Bases de dados: MEDLINE Tipo de estudo: Clinical_trials / Qualitative_research Idioma: En Revista: J Nanosci Nanotechnol Ano de publicação: 2012 Tipo de documento: Article