MgZnO p-n heterostructure light-emitting devices.

ABSTRACT

MgZnO heterostructure light-emitting devices (LEDs) have been fabricated from p-Mg(0.35)Zn(0.65)O/n-Mg(0.20)Zn(0.80)O structures, and the p-type Mg(0.35)Zn(0.65)O film was realized using a lithium-nitrogen codoping method. Obvious ultraviolet emission peaked at around 355 nm dominates the electroluminescence (EL) spectra of the device at room temperature, which comes from the near-band-edge emission of the n-type Mg(0.20)Zn(0.80)O film. This is the first report on MgZnO heterostructured LEDs and the shortest EL emission ever reported in ZnO-based p-n junction LEDs to the best of our knowledge.