Effect of surface Si redistribution on the alignment of Ge dots grown on pit-patterned Si(001) substrates.

Chen, Hung-Ming; Suen, Yuen-Wuu; Chen, Sao-Jie; Luo, Guang-Li; Lai, Yen-Pu; Chen, Shih-Ta; Lee, Chien-Hung; Kuan, Chieh-Hsiung

Chen, Hung-Ming; Suen, Yuen-Wuu; Chen, Sao-Jie; Luo, Guang-Li; Lai, Yen-Pu; Chen, Shih-Ta; Lee, Chien-Hung; Kuan, Chieh-Hsiung.

Afiliação

Chen HM; Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China.

Nanotechnology ; 25(47): 475301, 2014 Nov 28.

Article em En | MEDLINE | ID: mdl-25369731

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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2014 Tipo de documento: Article País de afiliação: China