Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor.

Pham, Hien Thu; Yang, Jin Ho; Lee, Don-Sung; Lee, Byoung Hun; Jeong, Hyun-Dam

Pham, Hien Thu; Yang, Jin Ho; Lee, Don-Sung; Lee, Byoung Hun; Jeong, Hyun-Dam.

Afiliação

Pham HT; Department of Chemistry, Chonnam National University , Gwangju 500-757, Republic of Korea.
Yang JH; School of Materials Science & Engineering, Gwangju Institute of Science & Technology , Gwangju 500-712, Republic of Korea.
Lee DS; Department of Chemistry, Chonnam National University , Gwangju 500-757, Republic of Korea.
Lee BH; School of Materials Science & Engineering, Gwangju Institute of Science & Technology , Gwangju 500-712, Republic of Korea.
Jeong HD; Department of Chemistry, Chonnam National University , Gwangju 500-757, Republic of Korea.

ACS Appl Mater Interfaces ; 8(11): 7248-56, 2016 Mar 23.

Article em En | MEDLINE | ID: mdl-26927618

Palavras-chave

barium titanate; ferroelectricity; indium oxide nanocrystal; nanocrystal; nanocrystal dielectric; thin film transistor

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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2016 Tipo de documento: Article

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