The surface electronic structure of silicon terminated (100) diamond.
Nanotechnology
; 27(27): 275201, 2016 Jul 08.
Article
em En
| MEDLINE
| ID: mdl-27211214
ABSTRACT
A combination of synchrotron-based x-ray spectroscopy and contact potential difference measurements have been used to examine the electronic structure of the (3 × 1) silicon terminated (100) diamond surface under ultra high vacuum conditions. An occupied surface state which sits 1.75 eV below the valence band maximum has been identified, and indications of mid-gap unoccupied surface states have been found. Additionally, the pristine silicon terminated surface is shown to possess a negative electron affinity of -0.86 ± 0.1 eV.
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Bases de dados:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
Ano de publicação:
2016
Tipo de documento:
Article
País de afiliação:
Austrália