Foldable and Disposable Memory on Paper.

Lee, Byung-Hyun; Lee, Dong-Il; Bae, Hagyoul; Seong, Hyejeong; Jeon, Seung-Bae; Seol, Myung-Lok; Han, Jin-Woo; Meyyappan, M; Im, Sung-Gap; Choi, Yang-Kyu

Lee, Byung-Hyun; Lee, Dong-Il; Bae, Hagyoul; Seong, Hyejeong; Jeon, Seung-Bae; Seol, Myung-Lok; Han, Jin-Woo; Meyyappan, M; Im, Sung-Gap; Choi, Yang-Kyu.

Afiliação

Lee BH; School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea.
Lee DI; Department of Memory Business, Samsung Electronics, San #16 Banwol-Dong, Hwasung-City, Gyeonggi-Do 445-701, Republic of Korea.
Bae H; School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea.
Seong H; School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea.
Jeon SB; Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea.
Seol ML; Graphene Research Center, KI for Nanocentury, KAIST, Daejeon 34141, South Korea.
Han JW; School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea.
Meyyappan M; Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035, USA.
Im SG; Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035, USA.
Choi YK; Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035, USA.

Sci Rep ; 6: 38389, 2016 12 06.

Article em En | MEDLINE | ID: mdl-27922094

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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Coréia do Sul