Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics.

Zhong, Ding; Seyler, Kyle L; Linpeng, Xiayu; Cheng, Ran; Sivadas, Nikhil; Huang, Bevin; Schmidgall, Emma; Taniguchi, Takashi; Watanabe, Kenji; McGuire, Michael A; Yao, Wang; Xiao, Di; Fu, Kai-Mei C; Xu, Xiaodong

Zhong, Ding; Seyler, Kyle L; Linpeng, Xiayu; Cheng, Ran; Sivadas, Nikhil; Huang, Bevin; Schmidgall, Emma; Taniguchi, Takashi; Watanabe, Kenji; McGuire, Michael A; Yao, Wang; Xiao, Di; Fu, Kai-Mei C; Xu, Xiaodong.

Afiliação

Zhong D; Department of Physics, University of Washington, Seattle, WA 98195, USA.
Seyler KL; Department of Physics, University of Washington, Seattle, WA 98195, USA.
Linpeng X; Department of Physics, University of Washington, Seattle, WA 98195, USA.
Cheng R; Department of Physics, Carnegie Mellon University, Pittsburg, PA 15213, USA.
Sivadas N; Department of Physics, Carnegie Mellon University, Pittsburg, PA 15213, USA.
Huang B; Department of Physics, University of Washington, Seattle, WA 98195, USA.
Schmidgall E; Department of Physics, University of Washington, Seattle, WA 98195, USA.
Taniguchi T; National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
Watanabe K; National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
McGuire MA; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
Yao W; Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China.
Xiao D; Department of Physics, Carnegie Mellon University, Pittsburg, PA 15213, USA.
Fu KC; Department of Physics, University of Washington, Seattle, WA 98195, USA.
Xu X; Department of Electrical Engineering, University of Washington, Seattle, WA 98195, USA.

Sci Adv ; 3(5): e1603113, 2017 May.

Article em En | MEDLINE | ID: mdl-28580423

Palavras-chave

2D materials; Exchange interaction; Spintronics; Valleytronics; ferromagnetic semiconductor; magnetic proximity effect; monolayer semiconductor; ultrafast charge transfer; van der Waals heterostructure

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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Sci Adv Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Estados Unidos